Low profile half pitch mini flat package optocoupler VISHAY TCMT1109 with phototransistor output

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Product Description

Product Overview

The TCMT110. series optocoupler features a phototransistor output optically coupled to a gallium arsenide infrared-emitting diode. Housed in a 4-pin, low-profile, half-pitch mini-flat package, it offers high safety requirements due to a fixed distance between input and output. Key advantages include low coupling capacitance, a wide ambient temperature range, and CTR selection into groups.

Product Attributes

Brand: Vishay Semiconductors
Product Line: TCMT110. Series
Certifications: UL1577, cUL, DIN EN 60747-5-5 (VDE 0884-5), FIMKO: FI EN 60950-1:2006, BSI: BS EN60065:2002 BS EN60950-1:2006, CQC GB 8898-2011, GB 4943.1-2011
Package Type: SSOP-4
Package Dimensions: 7.21 mm
Availability: Tape and reel only

Technical Specifications

Part Number	Agency Certified/Package	CTR (%) 5 mA	CTR (%) 10 mA	CTR (%) 5 mA	CTR (%) 10 mA	CTR (%) 5 mA	CTR (%) 10 mA	CTR (%) 5 mA	CTR (%) 10 mA	CTR (%) 5 mA
TCMT1100	UL, cUL, FIMKO, BSI, VDE SSOP-4	50 to 600
TCMT1101	UL, cUL, FIMKO, BSI, VDE SSOP-4		40 to 80
TCMT1102	UL, cUL, FIMKO, BSI, VDE SSOP-4			63 to 125
TCMT1103	UL, cUL, FIMKO, BSI, VDE SSOP-4				100 to 200
TCMT1104	UL, cUL, FIMKO, BSI, VDE SSOP-4					160 to 320
TCMT1105	UL, cUL, FIMKO, BSI, VDE SSOP-4						50 to 150
TCMT1106	UL, cUL, FIMKO, BSI, VDE SSOP-4						100 to 300
TCMT1107	UL, cUL, FIMKO, BSI, VDE SSOP-4						80 to 160
TCMT1108	UL, cUL, FIMKO, BSI, VDE SSOP-4						130 to 260
TCMT1109	UL, cUL, FIMKO, BSI, VDE SSOP-4						200 to 400

Parameter	Test Condition	Symbol	Min.	Typ.	Max.	Unit
Forward voltage	IF = 50 mA	VF		1.35	1.6	V
Junction capacitance	VR = 0, f = 1 MHz	Cj			8	pF
Collector emitter voltage	IC = 100 A	VCEO			70	V
Emitter collector voltage	IE = 100 A	VECO			7	V
Collector dark current	VCE = 20 V, IF = 0 A	ICEO			100	nA
Collector emitter saturation voltage	IF = 10 mA, IC = 1 mA	VCEsat		0.3		V
Cut-off frequency	VCE = 5 V, IF = 10 mA, RL = 100	fc			100	kHz
Coupling capacitance	f = 1 MHz	Ck		0.3		pF

Parameter	Test Condition	Symbol	Min.	Typ.	Max.	Unit
Delay time	VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1)	td		4.0		s
Rise time	VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1)	tr		5.5		s
Fall time	VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1)	tf		7.0		s
Storage time	VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1)	ts		1.5		s
Turn-on time	VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1)	ton		9.5		s
Turn-off time	VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1)	toff		8.5		s
Turn-on time	VS = 5 V, IF = 10 mA, RL = 1 k, (see figure 2)	ton		3.0		s
Turn-off time	VS = 5 V, IF = 10 mA, RL = 1 k, (see figure 2)	toff		20.0		s

Parameter	Test Condition	Symbol	Value	Unit
AC isolation test voltage (RMS)	Related to standard climate 23/50 DIN 50014	VISO	3750	VRMS
Total power dissipation		Ptot	250	mW
Operating ambient temperature range		Tamb	-40 to +100	C
Storage temperature range		Tstg	-40 to +125	C
Soldering temperature	(1)	Tsld	260	C
Comparative tracking index		CTI	175
Maximum rated withstanding isolation voltage	t = 1 min	VISO	3750	VRMS
Maximum transient isolation voltage		VIOTM	6000	V
Maximum repetitive peak isolation voltage		VIORM	707	V
Apparent charge test voltage (method A)	VIORM x 1.6 = VPR, type and sample test, tm = 60 s, partial discharge < 5 pC	VPR	1132	Vpeak
Apparent Charge Test Voltage (method B)	VIORM x 1.875 = VPR, 100 % production test with tm = 1 s, partial discharge < 5 pC	VPR	1326	Vpeak
Isolation resistance	VIO = 500 VDC, Tamb = 100 C	RIO	10¹¹
Isolation resistance (under fault conditions)	VIO = 500 VDC, Tamb = TSI	RIO	10⁹
Output safety power		PSO	350	mW
Input safety current		ISI	150	mA
Input safety temperature		TSI	175	C
Creepage distance			5	mm
Clearance distance			5	mm
Insulation thickness, reinforced rated per IEC60950 2.10.5.1			0.4	mm