optocoupler solution featuring VISHAY TCLT1008 with phototransistor output and low profile SOP4L package
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The TCLT100. series optocoupler features a phototransistor output optically coupled to a gallium arsenide infrared-emitting diode, housed in a 4-lead SOP4L package. Designed for applications requiring reliable isolation, it offers a low profile, high isolation voltage (VIORM = 1050 V), and flexibility in Current Transfer Ratio (CTR). Its special construction and extra-low coupling capacitance make it suitable for switchmode power supplies, computer peripheral interfaces, and microprocessor system interfaces.Product Attributes
- Brand: Vishay Semiconductors
- Package: SOP-4L, Long Mini-Flat Package
- Certifications: UL1577, CSA (cUL) 22.2, BSI: BS EN 41003, BS EN 60065, BS EN 60950, DIN EN 60747-5-5 (VDE 0884), FIMKO: EN 60950, CQC
- Material Compliance: Refer to www.vishay.com/doc?99912 for definitions of compliance.
- Availability: Tape and reel only.
Technical Specifications
| Parameter | Condition | Symbol | Value | Unit |
| Absolute Maximum Ratings | ||||
| Reverse voltage | VR | 6 | V | |
| Forward current | IF | 60 | mA | |
| Forward surge current | tp 10 s | IFSM | 1.5 | A |
| Power dissipation (Input) | Pdiss | 100 | mW | |
| Junction temperature (Input) | Tj | 125 | C | |
| Collector emitter voltage | VCEO | 70 | V | |
| Emitter collector voltage | VECO | 7 | V | |
| Collector current | IC | 50 | mA | |
| Collector peak current | tp/T = 0.5, tp 10 ms | ICM | 100 | mA |
| Power dissipation (Output) | Pdiss | 150 | mW | |
| Junction temperature (Output) | Tj | 125 | C | |
| Total power dissipation | Ptot | 250 | mW | |
| Operating ambient temperature range | Tamb | -55 to +100 | C | |
| Storage temperature range | Tstg | -55 to +125 | C | |
| Soldering temperature | Tsld | 260 | C | |
| Electrical Characteristics | ||||
| Forward voltage | IF = 50 mA | VF | 1.25 (typ.), 1.6 (max.) | V |
| Junction capacitance | VR = 0 V, f = 1 MHz | Cj | 50 (typ.) | pF |
| Collector emitter voltage | IC = 1 mA | VCEO | 70 | V |
| Emitter collector voltage | IE = 100 A | VECO | 7 | V |
| Collector emitter cut-off current | VCE = 20 V, IF = 0 A | ICEO | 10 (typ.), 100 (max.) | nA |
| Collector emitter saturation voltage | IF = 10 mA, IC = 1 mA | VCEsat | 0.3 (max.) | V |
| Cut-off frequency | VCE = 5 V, IF = 10 mA, RL = 100 | fc | 110 (typ.) | kHz |
| Coupling capacitance | f = 1 MHz | Ck | 0.3 (typ.) | pF |
| Current Transfer Ratio (CTR) | ||||
| CTR | VCE = 5 V, IF = 5 mA (TCLT1000) | CTR | 50 to 600 | % |
| CTR | VCE = 5 V, IF = 10 mA (TCLT1002) | CTR | 63 to 125 | % |
| CTR | VCE = 5 V, IF = 10 mA (TCLT1003) | CTR | 100 to 200 | % |
| CTR | VCE = 5 V, IF = 10 mA (TCLT1004) | CTR | 160 to 320 | % |
| CTR | VCE = 5 V, IF = 1 mA (TCLT1002) | CTR | 22 to 45 | % |
| CTR | VCE = 5 V, IF = 1 mA (TCLT1003) | CTR | 34 to 70 | % |
| CTR | VCE = 5 V, IF = 1 mA (TCLT1004) | CTR | 56 to 100 | % |
| CTR | VCE = 5 V, IF = 5 mA (TCLT1005) | CTR | 50 to 150 | % |
| CTR | VCE = 5 V, IF = 5 mA (TCLT1006) | CTR | 100 to 300 | % |
| CTR | VCE = 5 V, IF = 5 mA (TCLT1007) | CTR | 80 to 160 | % |
| CTR | VCE = 5 V, IF = 5 mA (TCLT1008) | CTR | 130 to 260 | % |
| CTR | VCE = 5 V, IF = 5 mA (TCLT1009) | CTR | 200 to 400 | % |
| Safety and Insulation Ratings | ||||
| Partial discharge test voltage - routine test | 100 %, ttest = 1 s | Vpd | 2 | kV |
| Partial discharge test voltage - lot test | ttest = 10 s, (see figure 2) | VIOTM | 8 (kVpeak) | kVpeak |
| Isolation test voltage (RMS) | VISO | 5000 | VRMS | |
| Insulation resistance | VIO = 500 V | RIO | 1012 | |
| Insulation resistance | VIO = 500 V, Tamb = 100 C | RIO | 1011 | |
| Forward current (Isolation) | Isi | 130 | mA | |
| Power dissipation (Isolation) | Pso | 265 | mW | |
| Rated impulse voltage | VIOTM | 8 | kV | |
| Safety temperature | Tsi | 150 | C | |
| Comparative tracking index | CTI | 175 | ||
| Clearance distance | 8.0 | mm | ||
| Creepage distance | 8.0 | mm | ||
| Insulation distance (internal) | 0.40 | mm | ||
| Switching Characteristics | ||||
| Delay time | VS = 5 V, IC = 2 mA, RL = 100 | td | 3 (typ.) | s |
| Rise time | VS = 5 V, IC = 2 mA, RL = 100 | tr | 3 (typ.) | s |
| Fall time | VS = 5 V, IC = 2 mA, RL = 100 | tf | 4.7 (typ.) | s |
| Storage time | VS = 5 V, IC = 2 mA, RL = 100 | ts | 0.3 (typ.) | s |
| Turn-on time | VS = 5 V, IC = 2 mA, RL = 100 | ton | 6 (typ.) | s |
| Turn-off time | VS = 5 V, IC = 2 mA, RL = 100 | toff | 5 (typ.) | s |
| Turn-on time | VS = 5 V, IF = 10 mA, RL = 1 k | ton | 9 (typ.) | s |
| Turn-off time | VS = 5 V, IF = 10 mA, RL = 1 k | toff | 10 (typ.) | s |
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina