Low Profile SOP4L Package Optocoupler VISHAY TCLT1009 with Gallium Arsenide Infrared Emitting Diode
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The TCLT100. series optocoupler features a phototransistor output optically coupled to a gallium arsenide infrared-emitting diode, housed in a 4-lead SOP4L package. Designed for switchmode power supplies, computer peripheral interfaces, and microprocessor system interfaces, this device offers a low profile SMD package, high isolation voltage (VIORM = 1050 V), and flexible CTR options. It provides DC input with transistor output, a creepage distance greater than 8 mm, and is available in tape and reel.
Product Attributes
- Brand: Vishay Semiconductors
- Package Type: SOP-4L, Long Mini-Flat Package
- Certifications: UL1577, CSA (cUL) 22.2, BSI: BS EN 41003, BS EN 60065, BS EN 60950, DIN EN 60747-5-5 (VDE 0884), FIMKO: EN 60950, CQC
- Material Categorization: Refer to www.vishay.com/doc?99912
- Availability: Tape and reel only
Technical Specifications
| Part Number | Agency Certified/Package | CTR (%) 5 mA | CTR (%) 10 mA | CTR (%) 5 mA | CTR (%) 10 mA | CTR (%) 5 mA | CTR (%) 10 mA | CTR (%) 5 mA | CTR (%) 10 mA |
| TCLT1000 | UL, cUL, VDE, BSI, FIMKO SOP-4L | 50 to 600 | |||||||
| TCLT1002 | UL, cUL, VDE, BSI, FIMKO SOP-4L | 63 to 125 | 22 to 45 | ||||||
| TCLT1003 | UL, cUL, VDE, BSI, FIMKO SOP-4L | 100 to 200 | 34 to 70 | ||||||
| TCLT1004 | UL, cUL, VDE, BSI, FIMKO SOP-4L | 160 to 320 | 56 to 100 | ||||||
| TCLT1005 | UL, cUL, VDE, BSI, FIMKO SOP-4L | 50 to 150 | |||||||
| TCLT1006 | UL, cUL, VDE, BSI, FIMKO SOP-4L | 100 to 300 | |||||||
| TCLT1007 | UL, cUL, VDE, BSI, FIMKO SOP-4L | 80 to 160 | |||||||
| TCLT1008 | UL, cUL, VDE, BSI, FIMKO SOP-4L | 130 to 260 | |||||||
| TCLT1009 | UL, cUL, VDE, BSI, FIMKO SOP-4L | 200 to 400 |
| Parameter | Condition | Symbol | Min. | Typ. | Max. | Unit |
| Reverse voltage | VR | 6 | V | |||
| Forward current | IF | 60 | mA | |||
| Forward surge current | tp 10 s | IFSM | 1.5 | A | ||
| Power dissipation | Pdiss | 100 | mW | |||
| Junction temperature | Tj | 125 | C | |||
| Collector emitter voltage | VCEO | 70 | V | |||
| Emitter collector voltage | VECO | 7 | V | |||
| Collector current | IC | 50 | mA | |||
| Collector peak current | tp/T = 0.5, tp 10 ms | ICM | 100 | mA | ||
| Power dissipation | Pdiss | 150 | mW | |||
| Junction temperature | Tj | 125 | C | |||
| Total power dissipation | Ptot | 250 | mW | |||
| Operating ambient temperature range | Tamb | -55 | +100 | C | ||
| Storage temperature range | Tstg | -55 | +125 | C | ||
| Soldering temperature | Tsld | 260 | C | |||
| Forward voltage | IF = 50 mA | VF | 1.25 | 1.6 | V | |
| Junction capacitance | VR = 0 V, f = 1 MHz | Cj | 50 | pF | ||
| Collector emitter voltage | IC = 1 mA | VCEO | 70 | V | ||
| Emitter collector voltage | IE = 100 A | VECO | 7 | V | ||
| Collector emitter cut-off current | VCE = 20 V, IF = 0 A | ICEO | 10 | 100 | nA | |
| Collector emitter saturation voltage | IF = 10 mA, IC = 1 mA | VCEsat | 0.3 | V | ||
| Cut-off frequency | VCE = 5 V, IF = 10 mA, RL = 100 | fc | 110 | kHz | ||
| Coupling capacitance | f = 1 MHz | Ck | 0.3 | pF | ||
| Partial discharge test voltage - routine test | 100 %, ttest = 1 s | Vpd | 2 | kV | ||
| Partial discharge test voltage - lot test (sample test) | tTr = 60 s, ttest = 10 s | VIOTM | 8 | kVpeak | ||
| Partial discharge test voltage - lot test (sample test) | tTr = 60 s, ttest = 10 s | Vpd | 1.68 | kVpeak | ||
| Isolation test voltage (RMS) | VISO | 5000 | VRMS | |||
| Insulation resistance | VIO = 500 V | RIO | 1012 | |||
| Insulation resistance | VIO = 500 V, Tamb = 100 C | RIO | 1011 | |||
| Insulation resistance | VIO = 500 V, Tamb = 150 C (construction test only) | RIO | 109 | |||
| Forward current | Isi | 130 | mA | |||
| Power dissipation | Pso | 265 | mW | |||
| Rated impulse voltage | VIOTM | 8 | kV | |||
| Safety temperature | Tsi | 150 | C | |||
| Comparative tracking index | CTI | 175 | ||||
| Clearance distance | 8.0 | mm | ||||
| Creepage distance | 8.0 | mm | ||||
| Insulation distance (internal) | 0.40 | mm | ||||
| Delay time | VS = 5 V, IC = 2 mA, RL = 100 | td | 3 | s | ||
| Rise time | VS = 5 V, IC = 2 mA, RL = 100 | tr | 3 | s | ||
| Fall time | VS = 5 V, IC = 2 mA, RL = 100 | tf | 4.7 | s | ||
| Storage time | VS = 5 V, IC = 2 mA, RL = 100 | ts | 0.3 | s | ||
| Turn-on time | VS = 5 V, IC = 2 mA, RL = 100 | ton | 6 | s | ||
| Turn-off time | VS = 5 V, IC = 2 mA, RL = 100 | toff | 5 | s | ||
| Turn-on time | VS = 5 V, IF = 10 mA, RL = 1 k | ton | 9 | s | ||
| Turn-off time | VS = 5 V, IF = 10 mA, RL = 1 k | toff | 10 | s |
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina