High Isolation Dual Channel Optocoupler VISHAY ILD213T with Narrow CTR Tolerance and Tape Reel Packaging
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Product Description
Product Overview
The ILD205T, ILD206T, ILD207T, ILD211T, and ILD213T are dual-channel optocouplers featuring a gallium arsenide infrared LED and a silicon NPN phototransistor. They provide high electrical isolation for signal transmission, including DC levels. Designed for surface mounting in a SOIC-8 package, these devices are ideal for high-density, space-constrained applications. The narrow tolerance in Current Transfer Ratio (CTR) and a high collector-emitter breakdown voltage (BVCEO) of 70 V offer enhanced design flexibility and safety.
Product Attributes
- Brand: Vishay Semiconductors
- Package: SOIC-8
- Certifications: UL1577 (file no. E52744), cUL (file no. E52744)
- Material: Gallium Arsenide Infrared LED, Silicon NPN Phototransistor
- Availability: Tape and Reel (EIA standard 481-2)
Technical Specifications
| Part Number | Agency Certified/Package | CTR (%) (IF=10mA, VCE=5V) | CTR (%) (IF=1mA, VCE=5V) | Isolation Test Voltage | BVCEO (V) |
| ILD205T | UL, cUL / SOIC-8 | 40 to 80 | 13 to 30 | 4000 VRMS | 70 |
| ILD206T | UL, cUL / SOIC-8 | 63 to 125 | 22 to 45 | 4000 VRMS | 70 |
| ILD207T | UL, cUL / SOIC-8 | 100 to 200 | 34 to 70 | 4000 VRMS | 70 |
| ILD211T | UL, cUL / SOIC-8 | 20 | - | 4000 VRMS | 70 |
| ILD213T | UL, cUL / SOIC-8 | 100 | - | 4000 VRMS | 70 |
Absolute Maximum Ratings
| Parameter | Test Condition | Symbol | Value | Unit |
| Peak reverse voltage | VR | 6 | V | |
| Peak pulsed current | 1 s, 300 pps | 1 | A | |
| Continuous forward current per channel | IF | 30 | mA | |
| Power dissipation (per channel) | Pdiss | 125 | mW | |
| Collector emitter breakdown voltage | BVCEO | 70 | V | |
| Emitter collector breakdown voltage | BVECO | 7 | V | |
| Total package dissipation | (2 LEDs and 2 detectors, 2 channels) | Ptot | 350 | mW |
| Storage temperature | Tstg | -55 to +150 | C | |
| Operating temperature | Tamb | -55 to +100 | C |
Electrical Characteristics
| Parameter | Test Condition | Symbol | Min. | Typ. | Max. | Unit |
| Forward voltage | IF = 10 mA | VF | - | 1.2 | 1.55 | V |
| Reverse current | VR = 6 V | IR | - | 0.1 | 100 | A |
| Collector emitter breakdown voltage | IC = 10 A | BVCEO | 70 | - | - | V |
| Emitter collector breakdown voltage | IE = 10 A | BVECO | 7 | - | - | V |
| Collector emitter leakage current | VCE = 10 V, IF = 0 A | ICEO | - | 5 | 50 | nA |
| Collector emitter saturation voltage | IF = 10 mA, IC = 2.5 mA | VCEsat | - | - | 0.4 | V |
Switching Characteristics
| Parameter | Test Condition | Symbol | Min. | Typ. | Max. | Unit |
| Delay time | (see figure 1) | td | - | 3 | - | s |
| Rise time | (see figure 1) | tr | - | 3 | - | s |
| Fall time | (see figure 1) | tf | - | 4.7 | - | s |
| Storage time | (see figure 1) | ts | - | 0.3 | - | s |
| Turn-on time | (see figure 1) | ton | - | 6 | - | s |
| Turn-off time | (see figure 1) | toff | - | 5 | - | s |
| Turn-on time | (see figure 2) | ton | - | 3 | - | s |
| Turn-off time | (see figure 2) | toff | - | 10 | - | s |
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina