SOIC 8 package dual channel optocoupler VISHAY ILD206T with gallium arsenide LED and phototransistor
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Product Description
Product Overview
The ILD205T, ILD206T, ILD207T, ILD211T, and ILD213T are dual-channel optocouplers featuring a gallium arsenide infrared LED and a silicon NPN phototransistor. They enable signal transmission with high electrical isolation between input and output, suitable for high-density surface-mounting applications due to their SOIC-8 package. The devices offer a specified minimum and maximum CTR for precise electrical design and a high BVCEO of 70 V for increased safety margin.
Product Attributes
- Brand: Vishay Semiconductors
- Package: SOIC-8
- Certifications: UL1577 (file no. E52744), cUL (file no. E52744, equivalent to CSA bulletin 5A)
- Material categorization: Refer to www.vishay.com/doc?99912
- Availability: Tape and reel option (conforms to EIA standard 481-2)
Technical Specifications
| Part Number | Agency Certified/Package | CTR (%) (10 mA) | CTR (%) (1 mA) | Isolation Test Voltage | BVCEO |
| ILD205T | UL, cUL / SOIC-8 | 40 to 80 | 13 to 30 | 4000 VRMS | 70 V |
| ILD206T | UL, cUL / SOIC-8 | 63 to 125 | 22 to 45 | 4000 VRMS | 70 V |
| ILD207T | UL, cUL / SOIC-8 | 100 to 200 | 34 to 70 | 4000 VRMS | 70 V |
| ILD211T | UL, cUL / SOIC-8 | 20 | - | 4000 VRMS | 70 V |
| ILD213T | UL, cUL / SOIC-8 | 100 | - | 4000 VRMS | 70 V |
Absolute Maximum Ratings
| Parameter | Test Condition | Symbol | Value | Unit |
| Peak reverse voltage | VR | 6 | V | |
| Peak pulsed current | 1 s, 300 pps | 1 | A | |
| Continuous forward current per channel | IF | 30 | mA | |
| Power dissipation | Pdiss | 50 | mW | |
| Collector emitter breakdown voltage | BVCEO | 70 | V | |
| Emitter collector breakdown voltage | BVECO | 7 | V | |
| Power dissipation per channel | Pdiss | 125 | mW | |
| Total package dissipation | (2 LEDs and 2 detectors, 2 channels) | Ptot | 350 | mW |
| Storage temperature | Tstg | -55 to +150 | C | |
| Operating temperature | Tamb | -55 to +100 | C | |
| Soldering time from 260 C | (1) | Tsld | 10 | s |
Electrical Characteristics
| Parameter | Test Condition | Symbol | Min. | Typ. | Max. | Unit |
| Forward voltage | IF = 10 mA | VF | - | 1.2 | 1.55 | V |
| Reverse current | VR = 6 V | IR | - | 0.1 | 100 | A |
| Capacitance | VR = 0 V | CO | - | 25 | - | pF |
| Collector emitter breakdown voltage | IC = 10 A | BVCEO | 70 | - | - | V |
| Emitter collector breakdown voltage | IE = 10 A | BVECO | 7 | - | - | V |
| Collector emitter leakage current | VCE = 10 V, IF = 0 A | ICEO | - | 5 | 50 | nA |
| Collector emitter capacitance | VCE = 0 V | CCE | - | 10 | - | pF |
| Collector emitter saturation voltage | IF = 10 mA, IC = 2.5 mA | VCEsat | - | - | 0.4 | V |
| Capacitance (input to output) | CIO | - | 0.5 | - | pF |
Switching Characteristics
| Parameter | Test Condition | Symbol | Min. | Typ. | Max. | Unit |
| Delay time | VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) | td | - | 3 | - | s |
| Rise time | VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) | tr | - | 3 | - | s |
| Fall time | VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) | tf | - | 4.7 | - | s |
| Storage time | VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) | ts | - | 0.3 | - | s |
| Turn-on time | VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) | ton | - | 6 | - | s |
| Turn-off time | VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) | toff | - | 5 | - | s |
| Turn-on time | VS = 5 V, IF = 10 mA, RL = 1 k, (see figure 2) | ton | - | 3 | - | s |
| Turn-off time | VS = 5 V, IF = 10 mA, RL = 1 k, (see figure 2) | toff | - | 10 | - | s |
Safety and Insulation Ratings
| Parameter | Test Condition | Symbol | Value | Unit |
| Climatic classification | According to IEC 68 part 1 | 55/100/21 | ||
| Comparative tracking index | CTI | 175 | ||
| Tested withstanding isolation voltage | According to UL1577, t = 1 s | VISO | 4000 | VRMS |
| Maximum transient isolation voltage | According to DIN EN 60747-5-5 | VIOTM | 6000 | Vpeak |
| Maximum repetitive peak isolation voltage | According to DIN EN 60747-5-5 | VIORM | 560 | Vpeak |
| Isolation resistance | Tamb = 25 C, VIO = 500 V | RIO | 1012 | |
| Isolation resistance | Tamb = 100 C, VIO = 500 V | RIO | 1011 | |
| Output safety power | PSO | 350 | mW | |
| Input safety current | ISI | 150 | mA | |
| Input safety temperature | TS | 165 | C | |
| Creepage distance | DIP-6, option 6 | 4 | mm | |
| Clearance distance | DIP-6, option 6 | 4 | mm | |
| Insulation thickness | 0.2 | mm |
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina