Low Input Current Optocoupler VISHAY VOS618A-3X001T SSOP-4 Package High Isolation Voltage for Industrial Controls
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Delivery Time:
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Product Description
Product Overview
The VOS618A series is a low input current optocoupler featuring a GaAs infrared emitting diode coupled to a silicon planar phototransistor. Packaged in a 4-pin SSOP-4 mini-flat package with a 50 mil lead pitch, it offers high current transfer ratio at low input current, low coupling capacitance, and high isolation voltage. It is designed for signal transmission between electrically separated circuits and is suitable for applications in telecom, industrial controls, battery-powered equipment, office machines, and programmable controllers.
Product Attributes
- Brand: Vishay Semiconductors
- Package Type: SSOP-4, Half Pitch, Mini-Flat Package
- Certifications: UL1577, cUL, DIN EN 60747-5-5 (VDE 0884-5), FIMKO EN 60065, EN 60950-1, CQC GB4943.1-2011 and GB8898-2011
- Material Categorization: Refer to www.vishay.com/doc?99912 for compliance definitions.
Technical Specifications
| Part Number | CTR (%) | Package | Agency Certified/Package |
| VOS618A | 50 to 600 | SSOP-4, 50 mil pitch | UL, cUL, FIMKO, CQC |
| VOS618A-2T | 63 to 125 | SSOP-4, 50 mil pitch | UL, cUL, FIMKO, CQC |
| VOS618A-3T | 100 to 200 | SSOP-4, 50 mil pitch | UL, cUL, FIMKO, CQC |
| VOS618A-7T | 80 to 160 | SSOP-4, 50 mil pitch | UL, cUL, FIMKO, CQC |
| VOS618A-8T | 130 to 260 | SSOP-4, 50 mil pitch | UL, cUL, FIMKO, CQC |
| VOS618A-X001T | 50 to 600 | SSOP-4 5 mm | UL, cUL, FIMKO, CQC, VDE (option 1) |
| VOS618A-2X001T | 63 to 125 | SSOP-4 5 mm | UL, cUL, FIMKO, CQC, VDE (option 1) |
| VOS618A-3X001T | 100 to 200 | SSOP-4 5 mm | UL, cUL, FIMKO, CQC, VDE (option 1) |
| VOS618A-7X001T | 80 to 160 | SSOP-4 5 mm | UL, cUL, FIMKO, CQC, VDE (option 1) |
| VOS618A-8X001T | 130 to 260 | SSOP-4 5 mm | UL, cUL, FIMKO, CQC, VDE (option 1) |
| Parameter | Test Condition | Symbol | Min. | Typ. | Max. | Unit |
| Forward voltage | IF = 50 mA | VF | 1.1 | 1.5 | V | |
| Reverse current | VR = 6 V | IR | 0.01 | 10 | A | |
| Input capacitance | VF = 0 V, f = 1 MHz | CI | 8 | pF | ||
| Collector emitter leakage current | VCE = 10 V | ICEO | 0.7 | 100 | nA | |
| Collector emitter breakdown voltage | IC = 100 A | BVCEO | 80 | V | ||
| Emitter collector breakdown voltage | IE = 10 A | BVECO | 7 | V | ||
| Collector emitter capacitance | VCE = 5 V, f = 1 MHz | CCE | 6 | pF | ||
| Collector emitter saturation voltage | IF = 1 mA, IC = 0.25 mA | VCEsat | 0.12 | 0.4 | V | |
| Cut-off frequency | IF = 10 mA, VCC = 5 V, RL = 100 | fctr | 119 | kHz | ||
| Coupling capacitance | f = 1 MHz | CC | 0.3 | pF | ||
| Isolation test voltage | t = 1 min | VISO | 3750 | VRMS | ||
| Total power dissipation | Ptot | 170 | mW | |||
| Storage temperature range | Tstg | -55 | +150 | C | ||
| Ambient temperature range | Tamb | -55 | +110 | C | ||
| Junction temperature | Tj | 125 | C | |||
| Soldering temperature | t = 10 s | Tsld | 260 | C | ||
| Turn on time | NON-SATURATED, VCC = 5 V, IC = 2 mA, RL = 100 | ton | 5 | s | ||
| Rise time | NON-SATURATED, VCC = 5 V, IC = 2 mA, RL = 100 | tr | 5 | s | ||
| Turn off time | NON-SATURATED, VCC = 5 V, IC = 2 mA, RL = 100 | toff | 8 | s | ||
| Fall time | NON-SATURATED, VCC = 5 V, IC = 2 mA, RL = 100 | tf | 7 | s | ||
| Rise and fall time | SATURATED, IF = 1.6 mA, VCC = 5 V, RL = 1.9 k | tr | 10 | s | ||
| Fall time | SATURATED, IF = 1.6 mA, VCC = 5 V, RL = 1.9 k | tf | 11 | s | ||
| Turn on time | SATURATED, IF = 1.6 mA, VCC = 5 V, RL = 1.9 k | ton | 14 | s | ||
| Turn off time | SATURATED, IF = 1.6 mA, VCC = 5 V, RL = 1.9 k | toff | 12 | s | ||
| Comparative tracking index | CTI | 175 | ||||
| Maximum rated withstanding isolation voltage | 40 % to 80 % RH, AC test of t = 1 min | VISO | 3750 | VRMS | ||
| Maximum transient isolation voltage | VIOTM | 6000 | Vpeak | |||
| Maximum repetitive peak isolation voltage | VIORM | 565 | Vpeak | |||
| Isolation resistance | Tamb = 25 C, VDC = 500 V | RIO | 1012 | |||
| Isolation resistance | Tamb = 100 C, VDC = 500 V | RIO | 1011 | |||
| Output safety power | PSO | 300 | mW | |||
| Input safety current | ISI | 200 | mA | |||
| Input safety temperature | TSI | 150 | C | |||
| Creepage distance | 5 | mm | ||||
| Clearance distance | 5 | mm | ||||
| Insulation thickness | DTI | 0.4 | mm | |||
| Environment (pollution degree in accordance to DIN VDE 0109) | 2 |
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina