optocoupler VISHAY TCLT1007 with flexible current transfer ratio and high isolation voltage in compact SOP4L package
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Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The TCLT100. series optocoupler features a phototransistor output optically coupled to a gallium arsenide infrared-emitting diode, housed in a 4-lead SOP4L package. Designed for applications requiring reliable electrical isolation, it is suitable for switchmode power supplies, computer peripheral interfaces, and microprocessor system interfaces. Key advantages include its SMD low profile, high isolation voltage (VIORM = 1050 V), flexible CTR options, and crepage distance greater than 8 mm.
Product Attributes
- Brand: Vishay Semiconductors
- Certifications: UL1577, CSA (cUL) 22.2, BSI: BS EN 41003, BS EN 60065, BS EN 60950, DIN EN 60747-5-5 (VDE 0884), FIMKO: EN 60950, CQC
- Package: SOP-4L, Long Mini-Flat Package
- Material: Refer to www.vishay.com/doc?99912 for material categorization.
Technical Specifications
| Parameter | Condition | Symbol | MIN. | TYP. | MAX. | UNIT | Part Number |
| Reverse voltage | VR | 6 | V | All | |||
| Forward current | IF | 60 | mA | All | |||
| Forward surge current | tp 10 s | IFSM | 1.5 | A | All | ||
| Power dissipation (Input) | Pdiss | 100 | mW | All | |||
| Collector emitter voltage | VCEO | 70 | V | All | |||
| Emitter collector voltage | VECO | 7 | V | All | |||
| Collector current | IC | 50 | mA | All | |||
| Collector peak current | tp/T = 0.5, tp 10 ms | ICM | 100 | mA | All | ||
| Power dissipation (Output) | Pdiss | 150 | mW | All | |||
| Total power dissipation | Ptot | 250 | mW | All | |||
| Operating ambient temperature range | Tamb | -55 | +100 | C | All | ||
| Storage temperature range | Tstg | -55 | +125 | C | All | ||
| Forward voltage | IF = 50 mA | VF | 1.25 | 1.6 | V | All | |
| Junction capacitance | VR = 0 V, f = 1 MHz | Cj | 50 | pF | All | ||
| Collector emitter cut-off current | VCE = 20 V, IF = 0 A | ICEO | 10 | 100 | nA | All | |
| Collector emitter saturation voltage | IF = 10 mA, IC = 1 mA | VCEsat | 0.3 | V | All | ||
| Cut-off frequency | VCE = 5 V, IF = 10 mA, RL = 100 | fc | 110 | kHz | All | ||
| Coupling capacitance | f = 1 MHz | Ck | 0.3 | pF | All | ||
| Current Transfer Ratio (CTR) | VCE = 5 V, IF = 5 mA | CTR | 50 | 600 | % | TCLT1000 | |
| Current Transfer Ratio (CTR) | VCE = 5 V, IF = 10 mA | CTR | 63 | 125 | % | TCLT1002 | |
| Current Transfer Ratio (CTR) | VCE = 5 V, IF = 10 mA | CTR | 100 | 200 | % | TCLT1003 | |
| Current Transfer Ratio (CTR) | VCE = 5 V, IF = 10 mA | CTR | 160 | 320 | % | TCLT1004 | |
| Current Transfer Ratio (CTR) | VCE = 5 V, IF = 1 mA | CTR | 22 | 45 | % | TCLT1002 | |
| Current Transfer Ratio (CTR) | VCE = 5 V, IF = 1 mA | CTR | 34 | 70 | % | TCLT1003 | |
| Current Transfer Ratio (CTR) | VCE = 5 V, IF = 1 mA | CTR | 56 | 100 | % | TCLT1004 | |
| Current Transfer Ratio (CTR) | VCE = 5 V, IF = 5 mA | CTR | 50 | 150 | % | TCLT1005 | |
| Current Transfer Ratio (CTR) | VCE = 5 V, IF = 5 mA | CTR | 100 | 300 | % | TCLT1006 | |
| Current Transfer Ratio (CTR) | VCE = 5 V, IF = 5 mA | CTR | 80 | 160 | % | TCLT1007 | |
| Current Transfer Ratio (CTR) | VCE = 5 V, IF = 5 mA | CTR | 130 | 260 | % | TCLT1008 | |
| Current Transfer Ratio (CTR) | VCE = 5 V, IF = 5 mA | CTR | 200 | 400 | % | TCLT1009 | |
| Partial discharge test voltage - routine test | 100 %, ttest = 1 s | Vpd | 2 | kV | All | ||
| Partial discharge test voltage - lot test | tTr = 60 s, ttest = 10 s | VIOTM | 8 | kVpeak | All | ||
| Isolation test voltage (RMS) | VISO | 5000 | VRMS | All | |||
| Insulation resistance | VIO = 500 V | RIO | 1012 | All | |||
| Insulation resistance | VIO = 500 V, Tamb = 100 C | RIO | 1011 | All | |||
| Forward current | Isi | 130 | mA | All | |||
| Power dissipation | Pso | 265 | mW | All | |||
| Rated impulse voltage | VIOTM | 8 | kV | All | |||
| Safety temperature | Tsi | 150 | C | All | |||
| Comparative tracking index | CTI | 175 | All | ||||
| Clearance distance | 8.0 | mm | All | ||||
| Creepage distance | 8.0 | mm | All | ||||
| Insulation distance (internal) | 0.40 | mm | All | ||||
| Delay time | VS = 5 V, IC = 2 mA, RL = 100 | td | 3 | s | All | ||
| Rise time | VS = 5 V, IC = 2 mA, RL = 100 | tr | 3 | s | All | ||
| Fall time | VS = 5 V, IC = 2 mA, RL = 100 | tf | 4.7 | s | All | ||
| Storage time | VS = 5 V, IC = 2 mA, RL = 100 | ts | 0.3 | s | All | ||
| Turn-on time | VS = 5 V, IC = 2 mA, RL = 100 | ton | 6 | s | All | ||
| Turn-off time | VS = 5 V, IC = 2 mA, RL = 100 | toff | 5 | s | All | ||
| Turn-on time | VS = 5 V, IF = 10 mA, RL = 1 k | ton | 9 | s | All | ||
| Turn-off time | VS = 5 V, IF = 10 mA, RL = 1 k | toff | 10 | s | All |
Get in Touch
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina