VISHAY 4N35 Optocoupler Featuring Phototransistor Output and Base Connection for Reed Relay Driving
Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection
This datasheet presents Vishay industry-standard single-channel phototransistor couplers, including the 4N35, 4N36, 4N37, and 4N38 families. Each optocoupler comprises a gallium arsenide infrared LED and a silicon NPN phototransistor. These devices offer high isolation performance, achieved through Vishay's double molding isolation manufacturing process and adherence to the ISO9001 quality program. They are available in lead-formed configurations suitable for surface mounting and are compliant with RoHS Directive 2002/95/EC and WEEE 2002/96/EC. Applications include AC mains detection, reed relay driving, switch mode power supply feedback, telephone ring detection, logic ground isolation, and logic coupling with high-frequency noise rejection.
Product Attributes
- Brand: Vishay Semiconductors
- Type: Optocoupler, Phototransistor Output, with Base Connection
- Certifications: UL, cUL, BSI, FIMKO, CQC, DIN EN 60747-5-5 (pending with option 1)
- Material: Gallium Arsenide Infrared LED and Silicon NPN Phototransistor
- Package: Industry standard dual-in-line 6 pin package (DIP-6), SMD-6
Technical Specifications
| Parameter | Test Condition | Symbol | 4N35 (MIN) | 4N35 (TYP) | 4N35 (MAX) | 4N36 (MIN) | 4N36 (TYP) | 4N36 (MAX) | 4N37 (MIN) | 4N37 (TYP) | 4N37 (MAX) | 4N38 (MIN) | 4N38 (TYP) | 4N38 (MAX) | Unit |
| INPUT | |||||||||||||||
| Forward voltage | IF = 10 mA | VF | 1.2 | 1.5 | 1.2 | 1.5 | 1.2 | 1.5 | 1.2 | 1.5 | V | ||||
| Forward voltage | IF = 10 mA, Tamb = - 55 C | VF | 0.9 | 1.3 | 1.7 | 0.9 | 1.3 | 1.7 | 0.9 | 1.3 | 1.7 | 0.9 | 1.3 | 1.7 | V |
| Reverse current | VR = 6 V | IR | 0.1 | 10 | 0.1 | 10 | 0.1 | 10 | 0.1 | 10 | A | ||||
| Capacitance | VR = 0 V, f = 1 MHz | CO | 25 | 25 | 25 | 25 | pF | ||||||||
| OUTPUT | |||||||||||||||
| Collector emitter breakdown voltage | IC = 1 mA | BVCEO | 30 | 30 | 30 | 80 | V | ||||||||
| Emitter base breakdown voltage | IE = 100 A | BVECO | 7 | 7 | 7 | 7 | V | ||||||||
| Collector base breakdown voltage | IC = 100 A, IB = 1 A | BVCBO | 70 | 70 | 70 | 80 | V | ||||||||
| Collector emitter leakage current | VCE = 10 V, IF = 0 | ICEO | 50 | 50 | 50 | 50 | nA | ||||||||
| Collector emitter leakage current | VCE = 60 V, IF = 0 | ICEO | 50 | nA | |||||||||||
| Collector emitter leakage current | VCE = 30 V, IF = 0, Tamb = 100 C | ICEO | 500 | 500 | 500 | 500 | A | ||||||||
| Collector emitter leakage current | VCE = 60 V, IF = 0, Tamb = 100 C | ICEO | 6 | A | |||||||||||
| Collector emitter capacitance | VCE = 0 | CCE | 6 | 6 | 6 | 6 | pF | ||||||||
| COUPLER | |||||||||||||||
| Isolation test voltage | t = 1 s | VISO | 5000 | 5000 | 5000 | 5000 | VRMS | ||||||||
| Creepage distance | 7 | 7 | 7 | 7 | mm | ||||||||||
| Clearance distance | 7 | 7 | 7 | 7 | mm | ||||||||||
| Isolation thickness | between emitter and detector | 0.4 | 0.4 | 0.4 | 0.4 | mm | |||||||||
| Comparative tracking index | DIN IEC 112/VDE 0303, part 1 | 175 | 175 | 175 | 175 | ||||||||||
| Isolation resistance | VIO = 500 V, Tamb = 25 C | RIO | 1012 | 1012 | 1012 | 1012 | |||||||||
| Isolation resistance | VIO = 500 V, Tamb = 100 C | RIO | 1011 | 1011 | 1011 | 1011 | |||||||||
| CURRENT TRANSFER RATIO (Tamb = 25 C) | |||||||||||||||
| CTRdc | VCE = 10 V, IF = 10 mA | 100 | 100 | 100 | % | ||||||||||
| CTRdc | VCE = 10 V, IF = 20 mA | 20 | % | ||||||||||||
| CTRdc | VCE = 10 V, IF = 10 mA, TA = - 55 C to + 100 C | 40 | 50 | 40 | 50 | 40 | 50 | % | |||||||
| CTRdc | VCE = 10 V, IF = 20 mA | 30 | % | ||||||||||||
| SWITCHING CHARACTERISTICS (Tamb = 25 C) | |||||||||||||||
| Turn-on time | VCC = 5 V, IC = 2 mA, RL = 100 | ton | 10 | 10 | 10 | 10 | s | ||||||||
| Turn-off time | VCC = 5 V, IC = 2 mA, RL = 100 | toff | 10 | 10 | 10 | 10 | s | ||||||||
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