IL4208-X007T SMD 6 Pin Optocoupler with Microcontroller Friendly Isolation and High dV dT Capability
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The IL420 and IL4208 are optocouplers featuring a GaAs IRLED coupled to a photosensitive thyristor system. They offer integrated noise suppression and non-zero crossing functionality, enabling low trigger currents of 1 mA. With a high dV/dt ratio of over 10 kV/s and load voltages up to 800 V, these devices provide a microcontroller-friendly solution for isolating low-voltage logic from high-voltage AC lines (120 VAC, 240 VAC, and 380 VAC). They are suitable for controlling various AC loads, including motors, solenoids, high-power thyristors, TRIACs, and solid-state relays.
Product Attributes
- Brand: Vishay Semiconductors
- Certifications: UL 1577, cUL, DIN EN 60747-5-5 (VDE 0884-5), FIMKO
- Material categorization: Refer to www.vishay.com/doc?99912
Technical Specifications
| Part Number | Package | Peak Off-State Voltage (VDRM) | Agency Approvals | Option |
| IL420 | DIP-6 | 600 V | UL, cUL, CQC | - |
| IL4208 | DIP-6 | 800 V | UL, cUL, CQC | - |
| IL420-X006T | DIP-6, 400 mil | 600 V | UL, cUL, CQC | 6 |
| IL420-X007T | SMD-6 | 600 V | UL, cUL, CQC | 7 |
| IL4208-X007T | SMD-6 | 800 V | UL, cUL, CQC | 7 |
| IL420-X009T | SMD-6 | 600 V | UL, cUL, CQC | 9 |
| IL4208-X009T | SMD-6 | 800 V | UL, cUL, CQC | 9 |
| IL420-X001 | DIP-6 | 600 V | VDE, UL, cUL, CQC | - |
| IL420-X016 | DIP-6, 400 mil | 600 V | VDE, UL, cUL, CQC | 6 |
| IL420-X017T | SMD-6 | 600 V | VDE, UL, cUL, CQC | 7 |
| IL4208-X017T | SMD-6 | 800 V | VDE, UL, cUL, CQC | 7 |
Absolute Maximum Ratings
| Parameter | Test Condition | Symbol | Value | Unit |
| Reverse voltage | VR | 6 | V | |
| Forward current | IF | 60 | mA | |
| Surge current | IFSM | 2.5 | A | |
| Power dissipation | Pdiss | 100 | mW | |
| Derate from 25 C | 1.33 | mW/C | ||
| Peak off-state voltage | IL420 | VDRM | 600 | V |
| Peak off-state voltage | IL4208 | VDRM | 800 | V |
| RMS on-state current | ITM | 300 | mA | |
| Single cycle surge current | ITSM | 3 | A | |
| Power dissipation | Pdiss | 500 | mW | |
| Derate from 25 C | 6.6 | mW/C | ||
| Storage temperature range | Tstg | -55 to +150 | C | |
| Ambient temperature range | Tamb | -55 to +100 | C | |
| Soldering temperature max. 10 s dip soldering 0.5 mm from case bottom | Tsld | 260 | C |
Electrical Characteristics
| Parameter | Test Condition | Symbol | Min. | Typ. | Max. | Unit |
| Forward voltage | IF = 10 mA | VF | 1.16 | 1.35 | V | |
| Reverse current | VR = 6 V | IR | 0.1 | 10 | A | |
| Input capacitance | VF = 0 V, f = 1 MHz | CIN | 40 | pF | ||
| Thermal resistance, junction to ambient | Rthja | 750 | C/W | |||
| Off-state current | VD = VDRM, Tamb = 100 C | IDRM | 10 | 100 | A | |
| On-state voltage | IT = 300 mA | VTM | 1.7 | 3 | V | |
| Surge (non-repetitive), on-state current | f = 50 Hz | ITSM | 3 | A | ||
| Holding current | IH | 65 | 500 | mA | ||
| Latching current | VT = 2.2 V | IL | 500 | A | ||
| LED trigger current | VD = 5 V | IFT | 1 | 2 | mA | |
| Trigger current temperature gradient | IFT/Tj | 7 | 14 | A/C | ||
| Critical rate of rise off-state voltage | VD = 0.67 VDRM, Tj = 25 C | dV/dtcr | 10 000 | V/s | ||
| Critical rate of rise off-state voltage | VD = 0.67 VDRM, Tj = 80 C | dV/dtcr | 5000 | V/s | ||
| Critical rate of rise of voltage at current commutation | VD = 230 VRMS, ID = 300 mARMS, TJ = 25 C | dV/dtcrq | 8 | V/s | ||
| Critical rate of rise of voltage at current commutation | VD = 230 VRMS, ID = 300 mARMS, TJ = 85 C | dV/dtcrq | 7 | V/s | ||
| Critical rate of rise of on-state current commutation | dI/dtcrq | 12 | A/ms | |||
| Thermal resistance, junction to ambient | Rthja | 150 | C/W | |||
| Critical rate of rise of coupled input / output voltage | IT = 0 A, VRM = VDM = VDRM | dV/dt | 5000 | V/s | ||
| Capacitance (input to output) | f = 1 MHz, VIO = 0 V | CIO | 0.8 | pF |
Switching Characteristics
| Parameter | Test Condition | Symbol | Min. | Typ. | Max. | Unit |
| Turn-on time | VRM = VDM = VDRM | ton | 35 | s |
Safety and Insulation Ratings
| Parameter | Test Condition | Symbol | Value | Unit |
| Climatic classification | According to IEC 68 part 1 | 55 / 100 / 21 | ||
| Comparative tracking index | CTI | 175 | ||
| Maximum rated withstanding isolation voltage | t = 1 min | VISO | 4420 | VRMS |
| Maximum transient isolation voltage | VIOTM | 8000 | Vpeak | |
| Maximum repetitive peak isolation voltage | VIORM | 890 | Vpeak | |
| Isolation resistance | VIO = 500 V, Tamb = 25 C | RIO | 1012 | |
| Isolation resistance | VIO = 500 V, Tamb = 100 C | RIO | 1011 | |
| Output safety power | PSO | 500 | mW | |
| Input safety current | ISI | 250 | mA | |
| Safety temperature | TS | 175 | C | |
| Creepage distance | DIP-6; SMD-6, option 7; SMD-6 option 9 | 7 | mm | |
| Clearance distance | 7 | mm | ||
| Creepage distance | DIP-6, option 6 | 8 | mm | |
| Clearance distance | 8 | mm | ||
| Insulation thickness | DTI | 0.4 | mm |
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina