Low Gate Charge 20V N Channel MOSFET with Advanced Trench Technology A Power microelectronics AP90N02NF
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Product Description
Product Overview
The AP90N02NF is a 20V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is specifically designed for battery protection and other switching applications, providing reliable performance in demanding environments.
Product Attributes
- Brand: APM Microelectronics
- Product ID: AP90N02NF
- Technology: Advanced Trench Technology
- Mode: N-Channel Enhancement Mode
- Package: PDFN5*6-8L
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| General Features | ||||||
| VDS | Drain-Source Voltage | 20 | V | |||
| ID | Continuous Drain Current | 90 | A | |||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V | 2.0 | m | ||
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | (TC=25) | 20 | V | ||
| VGS | Gate-Source Voltage | (TC=25) | 12 | V | ||
| ID@TC=25 | Continuous Drain Current | (Note 1) | 90 | A | ||
| ID@TC=100 | Continuous Drain Current | (Note 1) | 48 | A | ||
| IDM | Pulsed Drain Current | (Note 2) | 270 | A | ||
| EAS | Single Pulse Avalanche Energy | (Note 3) | 80 | mJ | ||
| IAS | Avalanche Current | 40 | A | |||
| PD@TC=25 | Total Power Dissipation | (Note 4) | 83 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-ambient | (Note 1, t10S) | 20 | /W | ||
| RJA | Thermal Resistance Junction-ambient | (Note 1, Steady State) | 55 | /W | ||
| RJC | Thermal Resistance Junction-case | (Note 1) | 1.5 | /W | ||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | 23 | --- | V |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.5 | 0.68 | 1.0 | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=20A (Note 2) | --- | 1.6 | 2.0 | m |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=20A (Note 2) | 1.9 | 2.5 | m | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=2.5V , ID=20A (Note 2) | --- | 2.8 | 3.8 | m |
| IDSS | Drain-Source Leakage Current | VDS=16V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| IDSS | Drain-Source Leakage Current | VDS=16V , VGS=0V , TJ=125 | --- | --- | 5 | uA |
| IGSS | Gate-Source Leakage Current | VGS=10V , VDS=0V | --- | --- | 10 | uA |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.2 | --- | |
| Qg | Total Gate Charge | VDS=15V , VGS=10V , ID=20A (10V) | --- | 77 | --- | nC |
| Qgs | Gate-Source Charge | --- | 8.7 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 14 | --- | nC | |
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3 , ID=20A | --- | 10.2 | --- | ns |
| Tr | Rise Time | --- | 11.7 | --- | ns | |
| Td(off) | Turn-Off Delay Time | --- | 56.4 | --- | ns | |
| Tf | Fall Time | --- | 16.2 | --- | ns | |
| Ciss | Input Capacitance | VDS=10V , VGS=0V , f=1MHz | --- | 4307 | --- | pF |
| Coss | Output Capacitance | --- | 501 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 321 | --- | pF | |
| IS | Continuous Source Current | VG=VD=0V , Force Current (Note 1, 5) | --- | --- | 50 | A |
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 (Note 2) | --- | --- | 1.2 | V |
| trr | Reverse Recovery Time | IF=20A , di/dt=100A/s , TJ=25 | --- | 22 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 72 | --- | nC | |
| Package Mechanical Data | ||||||
| Package Type | DFN5*6-8L-JQ | |||||
| Symbol | Description | Unit | Min | Max | Min | Max |
| A | mm | 1.03 | 1.17 | 0.0406 | 0.0461 | |
| b | mm | 0.34 | 0.48 | 0.0134 | 0.0189 | |
| c | mm | 0.824 | 0.970 | 0.0324 | 0.0382 | |
| D | mm | 4.80 | 5.40 | 0.1890 | 0.2126 | |
| D1 | mm | 4.11 | 4.31 | 0.1618 | 0.1697 | |
| D2 | mm | 4.80 | 5.00 | 0.1890 | 0.1969 | |
| E | mm | 5.95 | 6.15 | 0.2343 | 0.2421 | |
| E1 | mm | 5.65 | 5.85 | 0.2224 | 0.2303 | |
| E2 | mm | 1.60 | / | 0.0630 | / | |
| e | BSC | 1.27 | 0.05 | |||
| L | mm | 0.05 | 0.25 | 0.0020 | 0.0098 | |
| L1 | mm | 0.38 | 0.50 | 0.0150 | 0.0197 | |
| L2 | mm | 0.38 | 0.50 | 0.0150 | 0.0197 | |
| H | mm | 3.30 | 3.50 | 0.1299 | 0.1378 | |
| I | mm | / | 0.18 | / | 0.0070 | |
Notes:
- 1. Data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
- 2. Data tested by pulsed, pulse width 300us, duty cycle 2%.
- 3. EAS data shows Max. rating. Test condition is VDD=16V, VGS=10V, L=0.1mH, IAS=39A.
- 4. Power dissipation is limited by 175 junction temperature.
- 5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
Ordering Information:
| Product ID | Pack Marking | Qty(PCS) |
|---|---|---|
| AP90N02NF | AP90N02NF XXX YYYY | 5000 |
Applications:
- Battery protection
- Load switch
- Uninterruptible power supply
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