RoHS compliant NPN transistor amsem MMBT4401 with 300mW power dissipation and SOT23 surface mount package

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Product Description

Product Overview

The MMBT4401 is an NPN general-purpose amplifier designed for surface mounting in a SOT-23 package. It offers a power dissipation capability of 300mW and operates within a junction temperature range of -55 to 150. This device is RoHS compliant and available as a Green EMC product.

Product Attributes

Brand: Anhui Anmei Semiconductor Co.,Ltd.
Package: SOT-23
Certifications: RoHS compliant, Green EMC

Technical Specifications

Parameter	Symbol	Conditions	Min	Max	Unit
Maximum Ratings	VCBO	Collector-Base Voltage		60	V
	VCEO	Collector-Emitter Voltage		40	V
	VEBO	Emitter-Base Voltage		6	V
	IC	Collector Current		600	mA
	PC	Collector Power Dissipation		300	mW
	Tj	Junction Temperature			150
	Tstg	Storage Temperature	-55+150
Electrical Characteristics	VCEO	Collector-Emitter Breakdown Voltage (IC=1.0mA, IB=0)	40		V
	VCBO	Collector-Base Breakdown Voltage (IC=100A, IE=0)	60		V
	VEBO	Emitter-Base Breakdown Voltage (IE=100A, IC=0)	6.0		V
	ICBO	Collector Cutoff Current (VCB=50V, IE=0)		100	nA
	ICEX	Collector Cutoff Current (VCE=35V, VBE=0.4V)		100	nA
	IEBO	Emitter cut-off current (VEB=5V,IC=0V)		100	nA
	hFE	DC Current Gain (IC=1.0mA,VCE=1.0V)	40
	VCE(sat)	Collector-Emitter Saturation Voltage (IC=150mA,IB=15mA)		0.4	V
	VBE(sat)	Base-Emitter Saturation Voltage (IC=150mA,IB=15mA)		0.75	1.2	V
	fT	Current Gain-Bandwidth Product (IC=20mA, VCE=10V,f=100MHz)	250		MHz
Switching Characteristics	td	Delay Time (VCC=30V,VBE=0.2V IC=150mA,IB1=15mA)		15	ns
	ts	Storage Time (VCC=30V,IC=150mA IB1=IB2=15mA)		225	ns
	tf	Fall Time		30	ns