Dual NPN transistor amsem MMDT3904 designed for switching and AF amplifier applications epoxy package

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Product Description

Product Overview

The MMDT3904 is a dual NPN small signal transistor designed for switching and AF amplifier applications. It features an epoxy package that meets UL 94 V-0 flammability rating and a lead-free, RoHS-compliant finish. This device is rugged and reliable.

Product Attributes

Brand: An hui Anmei Semiconductor Co.,Ltd.
Origin: China (implied by company name and website)
Material: Epoxy package
Certifications: UL 94 V-0 flammability rating, RoHS Compliant

Technical Specifications

Device	Parameter	Test conditions	Min	Typ	Max	Unit
MMDT3904	Collector-Base Voltage (VCBO)				60	V
	Collector-Emitter Voltage (VCEO)				40	V
	Emitter-Base Voltage (VEBO)				5	V
	Collector Power Dissipation (PC)	(Ta = 25 )			200	mW
	Collector Current (IC)				200	mA
	Junction Temperature (TJ)				150
	Storage Temperature (TSTG)		-55		150
	Collector-base breakdown voltage (V(BR)CBO)	Ic=10A,IE=0	60			V
	Collector-emitter breakdown voltage (V(BR)CEO)	Ic=1mA,IB=0	40			V
	Emitter-base breakdown voltage (V(BR)EBO)	IE=10A,IC=0	5			V
	Collector cut-off current (ICBO)	VCB=30V,IE=0			50	nA
	Emitter-Base Cutoff Current (IEBO)	VEB =5V, IC=0			50	nA
MMDT3904	Collector cut-off current (ICEX)	VCE=30V,VBE(off)=3V			50	nA
	DC current gain (hFE)	VCE=1V,IC=0.1mA	40
	DC current gain (hFE)	VCE=1V,IC=1mA	70
	DC current gain (hFE)	VCE=1V,IC=10mA	100		300
	DC current gain (hFE)	VCE=1V,IC=50mA	60
	DC current gain (hFE)	VCE=1V,IC=100mA	30
	Collector-emitter saturation voltage (VCE(sat))	IC=10mA,IB=1mA		0.2			V
	Collector-emitter saturation voltage (VCE(sat))	IC=50mA,IB=5mA		0.3			V
	Base-emitter saturation voltage (VBE(sat))	IC=10mA,IB=1mA		0.65	0.85		V
	Base-emitter saturation voltage (VBE(sat))	IC=50mA,IB=5mA		0.95			V
MMDT3904	Transition frequency (fT)	VCE=20V,IC=10mA,f=100MHz		300		MHZ
	Collector output capacitance (Cob)	VCB=5V,IE=0,f=1MHz			4	pF
	Noise figure (NF)	VCE=5V,Ic=0.1mA,f=1kHz,RS=1K			5	dB
	Delay time (td)	VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=-IB2=1mA			35	nS
	Rise time (tr)	VCC=3V, IC=10mA, IB1=-IB2=1mA			35	nS
MMDT3904	Storage time (ts)	VCC=3V, IC=10mA, IB1=-IB2=1mA			200	nS
MMDT3904	Fall time (tf)	VCC=3V, IC=10mA, IB1=-IB2=1mA			50	nS