Amplifier transistor amsem BC817-25 NPN type with junction temperature range minus 55 to 150 degrees

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Product Description

Product Overview

The BC817 is an NPN general-purpose amplifier transistor in a surface-mount SOT-23 package. It is capable of 300mW of power dissipation and operates within a junction temperature range of -55 to 150. This RoHS compliant and Green EMC device is suitable for various amplification applications.

Product Attributes

Brand: An hui Anmei Semiconductor Co.,Ltd.
Origin: China (implied by company name and domain)
Certifications: RoHS compliant / Green EMC
Package: SOT-23

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Unit
Collector-Emitter Breakdown Voltage	VCEO	IC=10mA, IB=0		45	V
Collector-Base Breakdown Voltage	VCBO	IC=10A, IE=0		50	V
Emitter-Base Breakdown Voltage	VEBO	IE=1A, IC=0		5.0	V
Collector Cutoff Current	ICBO	VCB=45V, IE=0V		100	nA
Emitter Cut-off Current	IEBO	VEB=4V,IC=0		100	nA
DC Current Gain* (hfe(1))	hfe(1)	IC=100mA,VCE=1V	100	600
DC Current Gain* (hfe(2))	hfe(2)	IC=500mA,VCE=1V	40
Collector-Emitter Saturation Voltage	VCE(sat)	IC=500mA,IB=50mA		0.7	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=500mA,IB=50mA		1.2	V
Transition Frequency	fT	IC=10mA, VCE=5V,f=100MHz		100	MHZ
Collector Capacitance	Cob	VCB=10.0V, f=1MHz		10	PF
Power Dissipation	PC			300	mW
Operating and Storage Junction Temperatures	Tj, Tstg		-55	150
Thermal Resistance (Junction to Ambient)	RJA			417	/W