High Voltage N Channel MOSFET ASA65R270E for in Power Supplies LCD TVs and LED Lighting Applications
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Product Description
Product Overview
The ASD65R270E and ASA65R270E are N-Channel Silicon MOSFETs designed for single-ended flyback or two-transistor forward topologies. These enhancement-mode MOSFETs are easy to control and feature low drain-source on-resistance. They are suitable for applications such as PC power supplies, power adapters, LCD & PDP TVs, and LED lighting.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Part Name | Package | Marking | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) | Body diode dv/dt (V/ns) |
|---|---|---|---|---|---|---|---|
| ASD65R270E | TO252 | ASD65R270E | 700 | 270 | 23.2 | 58 | 50 |
| ASA65R270E | TO220F | ASA65R270E | 700 | 270 | 23.2 | 58 | 50 |
| Parameter | Symbol | Values (Min) | Values (Typ) | Values (Max) | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Continuous drain current | ID | - | - | 15 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - | - | 58 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - | - | 88 | mJ | Tc=25,VDD=50V, Iav=4.2A, L=10mH, RG=25 |
| Avalanche current, single pulse | IAR | - | - | 4.2 | A | Tc=25,VDD=50V, L=10mH, RG=25 |
| MOSFET dv/dt ruggedness | dv/dt | - | - | 80 | V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 | - | 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 | - | 30 | V | AC (f>1 Hz) |
| Power dissipation | Ptot | - | - | 125 | W | TC=25C |
| Storage temperature | Tstg | -55 | - | 150 | C | - |
| Operating junction temperature | Tj | -55 | - | 150 | C | - |
| Soldering Temperature | TL | - | - | 260 | C | Distance of 1.6mm from case for 10s |
| Reverse diode dv/dt | dv/dt | - | - | 50 | V/ns | VDS=0...400V, ISD |
| Thermal resistance, junction - case | RthJC | - | - | 0.99 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | - | - | 62 | C/W | device on PCB, minimal footprint |
| Drain-source breakdown voltage | V(BR)DSS | 650 | - | - | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 2.8 | - | 4.2 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - | - | 1 | uA | VDS=650V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - | - | 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - | 236 | 270 | m | VGS=10V, ID=5.5A, Tj=25C |
| Gate resistance (Intrinsic) | RG | - | 32 | - | f=1MHz, open drain | |
| Input capacitance | Ciss | - | 1160 | - | pF | VGS=0V, VDS=400V, f=250kHz |
| Output capacitance | Coss | - | 29.1 | - | pF | VGS=0V, VDS=400V, f=250kHz |
| Reverse transfer capacitance | Crss | - | 0.8 | - | pF | VGS=0V, VDS=400V, f=250kHz |
| Turn-on delay time | td(on) | - | 21.8 | - | ns | VDD=400V,VGS=13V,ID=5.2A, RG=10.2 |
| Rise time | tr | - | 23.4 | - | ns | VDD=400V,VGS=13V,ID=5.2A, RG=10.2 |
| Turn-off delay time | td(off) | - | 122.8 | - | ns | VDD=400V,VGS=13V,ID=5.2A, RG=10.2 |
| Fall time | tf | - | 21.4 | - | ns | VDD=400V,VGS=13V,ID=5.2A, RG=10.2 |
| Gate to source charge | Qgs | - | 5.4 | - | nC | VDD=400V, ID=5.2A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - | 8.1 | - | nC | VDD=400V, ID=5.2A, VGS=0 to 10V |
| Gate charge total | Qg | - | 23.2 | - | nC | VDD=400V, ID=5.2A, VGS=0 to 10V |
| Diode forward voltage | VSD | - | 0.74 | - | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - | 210.5 | - | ns | VR=400V, IF=5.2A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - | 1.7 | - | uC | VR=400V, IF=5.2A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | - | 18 | - | A | VR=400V, IF=5.2A, diF/dt=100A/s |
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