Soft Fast Recovery Diode 650V 5A AlphaIGBT AOS AOD5B65MQ1E Suitable for Hard Switching Applications
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The AOD5B65MQ1E is a 650V, 5A AlphaIGBT featuring a soft and fast recovery anti-parallel diode. This component utilizes the latest AlphaIGBT (IGBT) technology, offering a 650V breakdown voltage and is copacked with a very fast and soft antiparallel diode. It provides very good EMI performance with lower turn-on switching losses, high short-circuit ruggedness, and a high HBM class. Its applications include motor drives, home appliance applications, and other hard switching applications.
Product Attributes
- Brand: AOS (Alpha & Omega Semiconductor)
- Technology: AlphaIGBT (IGBT)
- ESD Protection: HBM Class 2
- Package Type: TO-252 (DPAK)
- Minimum Order Quantity: 2500
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Collector-Emitter Voltage | VCE | TA=25C unless otherwise noted | - | - | 650 | V |
| Continuous Collector Current | IC | TC=25C | - | - | 10 | A |
| Continuous Collector Current | IC | TC=100C | - | - | 5 | A |
| Diode Pulsed Current, Limited by TJmax | IFM | - | - | - | 15 | A |
| Pulsed Collector Current, Limited by TJmax | ILM | - | - | - | 15 | A |
| Gate-Emitter Voltage | VGE | - | - | - | 20 | V |
| Power Dissipation | PD | TC=25C | - | - | 52 | W |
| Junction and Storage Temperature Range | TJ, TSTG | - | -55 | - | 150 | C |
| Maximum Lead Temperature for Soldering Purpose, 1/8" from case for 5 seconds | TL | - | - | - | 300 | C |
| Thermal Characteristics | ||||||
| Maximum IGBT Junction-to-Case | RqJC | - | - | - | 2.4 | C/W |
| Maximum Diode Junction-to-Case | RqJC (1) | - | - | - | 6.8 | C/W |
| Maximum Junction-to-Ambient | RqJA | - | - | - | 55 | C/W |
| Electrical Characteristics (TJ=25C unless otherwise noted) | ||||||
| Collector-Emitter Breakdown Voltage | BVCES | VGE=0V, IC=1mA | 650 | - | - | V |
| Gate-Emitter Threshold Voltage | VGE(th) | VCE=20V, IC=1mA | 4.2 | 5.1 | 5.6 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=5A, TJ=25C | - | 2.15 | 2.7 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=5A, TJ=125C | - | 2.74 | - | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=5A, TJ=150C | - | 2.89 | - | V |
| Zero Gate Voltage Collector Current | ICES | VCE=650V, VGE=0V | - | - | 10 | A |
| Gate-Emitter Leakage Current | IGES | VGE=0V, VCE=20V | - | - | 10 | A |
| Diode Forward Voltage | VF | IF=5A, VGE=0V, TJ=25C | - | 2.06 | 2.6 | V |
| Diode Forward Voltage | VF | IF=5A, VGE=0V, TJ=125C | - | 2.17 | - | V |
| Diode Forward Voltage | VF | IF=5A, VGE=0V, TJ=150C | - | 2.13 | - | V |
| Forward Transconductance | gFS | VCE=20V, IC=5A | - | 2 | - | S |
| Input Capacitance | Cies | VGE=0V, VCC=25V, f=1MHz | - | 235 | - | pF |
| Output Capacitance | Coes | VGE=0V, VCC=25V, f=1MHz | - | 22 | - | pF |
| Reverse Transfer Capacitance | Cres | VGE=0V, VCC=25V, f=1MHz | - | 5 | - | pF |
| Total Gate Charge | Qg | VGE=15V, VCC=520V, IC=5A | - | 8.8 | - | nC |
| Gate to Emitter Charge | Qge | VGE=15V, VCC=520V, IC=5A | - | 2.6 | - | nC |
| Gate to Collector Charge | Qgc | VGE=15V, VCC=520V, IC=5A | - | 3.4 | - | nC |
| Gate Resistance | Rg | - | - | 20 | - | |
| Short Circuit Withstanding Time (1) | tSC | VGE=15V, VCC400V, TJ150C | - | 5 | - | ms |
| Short Circuit Collector Current | IC(SC) | VGE=15V, VCC=400V, tsc5us, TJ150C | - | - | 20 | A |
| Switching Parameters (Load Inductive, TJ=25C) | ||||||
| Turn-On Delay Time | tD(on) | VGE=15V, VCC=400V, IC=5A, RG=60 | - | 7 | - | ns |
| Turn-On Rise Time | tr | VGE=15V, VCC=400V, IC=5A, RG=60 | - | 13 | - | ns |
| Turn-Off Delay Time | tD(off) | VGE=15V, VCC=400V, IC=5A, RG=60 | - | 78 | - | ns |
| Turn-Off Fall Time | tf | VGE=15V, VCC=400V, IC=5A, RG=60 | - | 20 | - | ns |
| Turn-On Energy | Eon | VGE=15V, VCC=400V, IC=5A, RG=60 | - | 0.09 | - | mJ |
| Turn-Off Energy | Eoff | VGE=15V, VCC=400V, IC=5A, RG=60 | - | 0.06 | - | mJ |
| Total Switching Energy | Etotal | VGE=15V, VCC=400V, IC=5A, RG=60 | - | 0.15 | - | mJ |
| Switching Parameters (Load Inductive, TJ=150C) | ||||||
| Turn-On Delay Time | tD(on) | VGE=15V, VCC=400V, IC=5A, RG=60 | - | 6.5 | - | ns |
| Turn-On Rise Time | tr | VGE=15V, VCC=400V, IC=5A, RG=60 | - | 14 | - | ns |
| Turn-Off Delay Time | tD(off) | VGE=15V, VCC=400V, IC=5A, RG=60 | - | 96 | - | ns |
| Turn-Off Fall Time | tf | VGE=15V, VCC=400V, IC=5A, RG=60 | - | 34 | - | ns |
| Turn-On Energy | Eon | VGE=15V, VCC=400V, IC=5A, RG=60 | - | 0.10 | - | mJ |
| Turn-Off Energy | Eoff | VGE=15V, VCC=400V, IC=5A, RG=60 | - | 0.10 | - | mJ |
| Total Switching Energy | Etotal | VGE=15V, VCC=400V, IC=5A, RG=60 | - | 0.20 | - | mJ |
| Diode Switching Parameters (TJ=25C) | ||||||
| Diode Reverse Recovery Time | trr | IF=5A, di/dt=200A/ms, VCC=400V | - | 74 | - | ns |
| Diode Reverse Recovery Charge | Qrr | IF=5A, di/dt=200A/ms, VCC=400V | - | 0.11 | - | mC |
| Diode Peak Reverse Recovery Current | Irm | IF=5A, di/dt=200A/ms, VCC=400V | - | 2.46 | - | A |
| Diode Switching Parameters (TJ=150C) | ||||||
| Diode Reverse Recovery Time | trr | IF=5A, di/dt=200A/ms, VCC=400V | - | 161 | - | ns |
| Diode Reverse Recovery Charge | Qrr | IF=5A, di/dt=200A/ms, VCC=400V | - | 0.21 | - | mC |
| Diode Peak Reverse Recovery Current | Irm | IF=5A, di/dt=200A/ms, VCC=400V | - | 2.83 | - | A |
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Sellina