Amplifier transistor amsem MMBT2222AM NPN type designed for electronic circuits requiring amplification

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The MMBT2222AM is an NPN general-purpose amplifier designed for surface mount applications. It features epitaxial planar die construction and operates across a wide temperature range. This RoHS compliant and Green EMC device is suitable for various electronic circuits requiring amplification.

Product Attributes

Device Marking Code: MMBT2222AM 1P
RoHS compliant / Green EMC
Brand: Anhui Anmei Semiconductor Co.,Ltd.
Origin: China

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Unit
Maximum Ratings	VCBO	Collector-Base Voltage		75	V
	VCEO	Collector-Emitter Voltage		40	V
	VEBO	Emitter-Base Voltage		6.0	V
	IC	Collector CurrentContinuous		600	mA
	PD	Total Device Dissipation		265	mW
	Tj, Tstg	Junction and Storage Temperature	-55	+150
Off Electrical Characteristics	V(BR)CEO	Collector-Emitter Breakdown Voltage (IC=10.0mA, IB=0)	40	-	V
	V(BR)CBO	Collector-Base Breakdown Voltage (IC=10A, IE=0)	75	-	V
	V(BR)EBO	Emitter-Base Breakdown Voltage (IE=10A, IC=0)	6.0	-	V
	ICBO	Collector Cutoff Current (VCB=60V, IE=0)		10	nA
	ICEX	Collector Cutoff Current (VCE=60V, VEB(off)=3.0V)		0.01	uA
	IEBO	Emitter cut-off current (VEB=3V,IC=0)		0.1	uA
On Electrical Characteristics	hFE	DC Current Gain (IC=0.1mA , VCE =10V)	35	-	-
		(IC =1.0mA , VCE =10V)	50	-	-
		(IC=10mA , VCE=10V)	75	-	-
		(IC=150mA , VCE=10V) (Note 1)	100	300	-
	VCE(Sat)	CollectorEmitter Saturation Voltage (Note 1) (Ic=150mA , IB=15mA )	-	0.3	V
BaseEmitter Saturation Voltage	VBE(Sat)	(Note 1) Ic=150mA, IB=15mA	0.6	1.2	V
BaseEmitter Saturation Voltage	(IC=500mA,IB=50mA)	-	2.0	V
SmallSignal Characteristics	fT	CurrentGain Bandwidth Product(Note 2) (IC=20mA, VCE=20V , f=100MHz)	300	-	MHz
	Cobo	Output Capacitance (VCB=10V,IE=0, f=1.0MHz)	-	8.0	pF
	Cibo	Input Capacitance (VEB=0.5V,IC=0,f=1.0MHz)	-	25	pF
Switching Characteristics	td	Delay Time (VCC=30V,IC=150mA ,VBE(off)=-0.5V ,IB1=15mA)	-	10	ns
	tr	Rise Time	-	25	-
	ts	Storage Time (VCC=30V ,IC=150mA , IB1=IB2=15mA )	-	225	-
	tf	Fall Time	-	60	-