General purpose PNP transistor amsem MMBT5401 featuring SOT23 package and 300 milliwatt power rating

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Product Description

Product Overview

The MMBT5401 is a PNP transistor in a SOT-23 plastic-encapsulated package. It is complementary to the MMBT5551, offering high stability and reliability with a maximum power dissipation of 300mW. This component is suitable for general-purpose applications requiring a robust and dependable transistor.

Product Attributes

Brand: Anhui Anmei Semiconductor Co., Ltd.
Origin: China
Package: SOT-23
Epoxy UL Flammability: 94V-0
Mounting Position: Any

Technical Specifications

Parameter	Symbol	Test Condition	Min	Max	Unit
Maximum Ratings & Thermal Characteristics (TA = 25 unless otherwise specified)
Collector-Base Voltage	VCBO			-160	V
Collector-Emitter Voltage	VCEO			-150	V
Emitter-Base Voltage	VEBO			-5	V
Collector Current-Continuous	IC			-600	mA
Collector Power Dissipation	PC			300	mW
Junction Temperature	Tj			150
Storage Temperature	Tstg		-55	+150
Thermal resistance Junction to Ambient	RJA			416	/W
Electrical Characteristics (TA = 25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC=-100uA, IE=0	-160		V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-1mA, IB=0	-150		V
Emitter-base breakdown voltage	V(BR)EBO	IE=-10uA, IC=0	-5		V
Collector cut-off current	ICBO	VCB=-120V, IE=0		-100	nA
Emitter cut-off current	IEBO	VEB=-4V, IC=0		-100	nA
DC current gain	hFE(1)	VCE=-5V, IC=-1mA	80
	hFE(2)	VCE=-5V, IC=-10mA	100	300
	hFE(3)	VCE=-5V, IC=-50mA	30
Collector-emitter saturation voltage	VCE(sat)1	IC=-10mA, IB=-1mA		-0.2	V
Collector-emitter saturation voltage	VCE(sat)2	IC=-50mA, IB=-5mA		-0.5	V
Base-emitter saturation voltage	VBE(sat)1	IC=-10mA, IB=-1mA		-1.00	V
Base-emitter saturation voltage	VBE(sat)2	IC=-50mA, IB=-5mA		-1.00	V
Transition frequency	fT	VCE=-5V, IC=10mA,f=30MHz	100		MHz
*Pulse test: pulse width300us, duty cycle2.0%
CLASSIFICATION OF hFE(2)
HFE RANK	L	H
RANGE	100-200	200-300