RoHS compliant PNP transistor amsem BC807-40 with 500mA collector current and Green EMC certification

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Product Description

Product Overview

The BC807 is a PNP general-purpose amplifier transistor designed for surface mount applications. It offers a power dissipation capability of 300mW and a collector current of 500mA, with a wide operating and storage junction temperature range. This RoHS compliant and Green EMC device is suitable for various amplification tasks.

Product Attributes

Brand: Anhui Anmei Semiconductor Co.,Ltd.
Origin: China
Package: SOT-23
Certifications: RoHS compliant / Green EMC

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Max	Unit	BC807-16	BC807-25	BC807-40
VCBO	Collector-Base Voltage			-50	V
VCEO	Collector-Emitter Voltage			-45	V
VEBO	Emitter-Base Voltage			-5	V
IC	Collector Current			-500	mA
PC	Collector Power Dissipation	(Ta=25)		300	mW
RJA	Thermal Resistance From Junction To Ambient			417	/W
Tj	Junction Temperature			150
TSTG	Storage Temperature		-55	+150
VCEO	Collector-Emitter Breakdown Voltage	IC=-10mA, IB=0	-45		V
VCBO	Collector-Base Breakdown Voltage	IC=-10A, IE=0	-50		V
VEBO	Emitter-Base Breakdown Voltage	IE=-10A, IC=0	-5.0		V
ICBO	Collector Cutoff Current	VCB=-45V, IE=0V		-100	nA
ICEO	Collector Cutoff Current	VCE=-40V, IE=0V		-200	nA
IEBO	Collector Cutoff Current	VEB=-4V, VBE=0V		-100	nA
hFE(1)	DC Current Gain*	IC=-100mA,VCE=-1V	100	250		100-250	160-400	250-600
hFE(1)	DC Current Gain*	IC=-100mA,VCE=-1V	160	400
hFE(1)	DC Current Gain*	IC=-100mA,VCE=-1V	250	600
hFE(2)	DC Current Gain*	IC=-500mA, VCE=-1V	40
VCE(sat)	Collector-Emitter Saturation Voltage	IC=-500mA,IB=-50mA		0.7	V
VBE(sat)	Base-Emitter Saturation Voltage	IC=-500mA,IB=-50mA		1.2	V
fT	Current Gain-Bandwidth Product	IC=-10mA, VCE=-5.0V,f=100MHz	100		MHZ