Switching transistor amsem MMDT3946 complementary NPN PNP with epitaxial silicon planar design and general purpose

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Product Description

MMDT3946 Complementary NPN / PNP General Purpose Switching Transistor

The MMDT3946 is an epitaxial silicon, planar design complementary NPN/PNP general purpose switching transistor. It features a collector-emitter voltage of 40V and a collector current of 200mA, making it suitable for various switching applications. This device is compliant with EU RoHS 2002/95/EC directives.

Product Attributes

Brand: Anhui Anmei Semiconductor Co., Ltd.
Origin: China
Material: Epitaxial silicon, planar design
Certifications: EU RoHS 2002/95/EC

Technical Specifications

Parameter	Symbol	NPN Min	NPN Typ	NPN Max	PNP Min	PNP Typ	PNP Max	Unit
Collector-Emitter Voltage (Breakdown)	V(BR)CEO	40			-40			V
Collector-Emitter Voltage (Breakdown)	V(BR)CBO	40			-40			V
Emitter-Base Voltage (Breakdown)	V(BR)EBO	0.5			-0.5			V
Collector Current (Continuous)	IC			200			-200	mA
Max Power Dissipation	PD T O T			200				mW
Thermal Resistance (Junction to Ambient)	RJA		250					C/W
Junction Temperature	TJ	-55		150	-55		150	C
Storage Temperature	T GTS	-55		150	-55		150	C
Collector Cutoff Current	ICEX			0.05			-0.05	uA
Base Cutoff Current	IBL			0.05			-0.05	uA
DC Current Gain	hFE	70	100-300		30-100
Saturation Voltage (Collector-Emitter)	VCE(sat)		0.1	0.3		-0.1	-0.3	V
Saturation Voltage (Base-Emitter)	VBE(sat)		0.5	0.8		-0.5	-0.8	V
Capacitance (Base-Emitter)	Cobo		0.4			0.4		pF
Capacitance (Base-Collector)	Cibo		0.8			1.0		pF
Delay Time	td		3			-3		ns
Rise Time	tr		3			-3		ns
Storage Time	ts		200			-200		ns
Fall Time	tf		50			-50		ns