Small Signal Dual NPN PNP Transistor amsem MMDT5451 Designed for Switching and Audio Frequency Amplifier

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Product Description

Product Overview

The MMDT5451 is a dual NPN+PNP small signal transistor designed for switching and AF amplifier applications. It features a rugged and reliable construction, meets UL 94 V-0 flammability rating, and is lead-free and RoHS compliant.

Product Attributes

Brand: An hui Anmei Semiconductor Co.,Ltd.
Origin: China (implied by company name and domain)
Certifications: UL 94 V-0 Flammability Rating, RoHS Compliant

Technical Specifications

Type	Parameter	Test Conditions	Min	Typ	Max	Unit
NPN Transistor	V(BR)CBO	Ic=100A,IE=0			180	V
	V(BR)CEO	Ic=1mA,IB=0			160	V
	V(BR)EBO	IE=10A,IC=0			6	V
	ICBO	VCB=120V,IE=0			50	nA
	IEBO	VEB =4V, IC=0			50	nA
	hFE	VCE=5V,IC=1mA	80
	hFE	VCE=5V,IC=10mA		100	300
	hFE	VCE=5V,IC=50mA			30
	VCE(sat)	IC=10mA,IB=1mA		0.15		V
	VCE(sat)	IC=50mA,IB=5mA		0.20		V
	VBE(sat)	IC=10mA,IB=1mA		1.0		V
	fT	VCE=10V, IC=10mA, f=100MHz		100	300	MHz
PNP Transistor	V(BR)CBO	Ic=-100A,IE=0			-160	V
	V(BR)CEO	Ic=-1mA,IB=0			-150	V
	V(BR)EBO	IE=-10A,IC=0			-5	V
	ICBO	VCB=-120V,IE=0			-50	nA
	IEBO	VEB =-3V, IC=0			-50	nA
	hFE	VCE=-5V,IC=-1mA	50
	hFE	VCE=-5V,IC=-10mA		100	300
	hFE	VCE=-5V,IC=-50mA			50
	VCE(sat)	IC=-10mA,IB=-1mA		-0.20		V
	VCE(sat)	IC=-50mA,IB=-5mA		-0.50		V
	VBE(sat)	IC=-10mA,IB=-1mA		-1.0		V
	fT	VCE=-10V,IC=-10mA, f=100MHz		100	300	MHz
Common	PD	Power Dissipation			200	mW
Common	RJA	Thermal Resistance Junction to Ambient			625	/W