Medium power NPN transistor amsem MMBTA05 featuring epitaxial planar die and RoHS compliance for circuits

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Product Description

Product Overview

The MMBTA05 is an NPN general-purpose amplifier designed for medium power amplification and switching applications. It features epitaxial planar die construction, RoHS compliance, and a Green EMC rating, contributing to reduced board space and component count. The epoxy meets UL 94 V-0 flammability rating.

Product Attributes

Brand: An hui Anmei Semiconductor Co.,Ltd.
Origin: China (implied by company name and URL)
Certifications: RoHS compliant, Green EMC, UL 94 V-0 Flammability Rating

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Units
VCBO	Collector-Base Voltage				60	V
VCEO	Collector-Emitter Voltage				60	V
VEBO	Emitter-Base Voltage				4	V
IC	Collector Current				500	mA
PD	Power Dissipation				300	mW
Tj	Junction Temperature		-55		+150
Tstg	Storage Temperature		-55		+150
RJA	Thermal Resistance Junction-to-Ambient (Note 1)			417		/W
ICBO	Collector-Base Cutoff Current	VCB = 60 V, IE = 0			0.1	A
ICEO	Collector-Emitter Cutoff Current	VCE = 60 V, IB = 0			1	A
IEBO	Emitter-Base Cutoff Current	VEB = 3.0 V, IC = 0			0.1	mA
V(BR)CBO	Collector-Base Breakdown Voltage	IC = 100A, IE = 0			60	V
V(BR)CEO	Collector-Emitter Breakdown Voltage	IC = 1.0mA, IB = 0			60	V
V(BR)EBO	Emitter-Base Breakdown Voltage	IE = 100A, IC = 0			4	V
hFE(1)	DC Current Gain	VCE = 1 V, IC = 10 mA	100		400
hFE(2)	DC Current Gain	VCE = 1 V, IC = 100 mA	100
VCE(sat)	Collector-Emitter Saturation Voltage	IC = 100 mA, IB = 10 mA			0.25	V
VBE(sat)	Base-Emitter Saturation Voltage	IC = 100 mA, IB = 10 mA			1.2	V
fT	Transition Frequency	VCE=2V, IC=10mA, f=100MHz		100		MHz