Low rds on 30 volt n channel mosfet ARK micro AKF30N5P0SX for battery powered systems and ups inverters
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Product Description
Product Overview
The AKF30N5P0SX is a 30V N-Channel Enhancement Mode MOSFET from ARK Microelectronics Co., Ltd. It features low RDS(ON), low gate charge, and advanced high cell density trench technology. This RoHS compliant and Halogen-free available MOSFET is 100% avalanche tested and is suitable for high efficiency DC/DC converters, synchronous rectification, UPS inverters, power management, and battery-powered systems.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Product Code: AKF30N5P0SX
- Package: PDFN3333
- Marking: 30N5P0SX
- Certifications: RoHS Compliant, Halogen-free available
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
| Drain-to-Source Voltage | VDSS | -- | -- | 30 | V | VGS=0V, ID=250A |
| Gate-to-Source Voltage | VGSS | -- | -- | ±20 | V | -- |
| Continuous Drain Current | ID | -- | -- | 59 | A | TC=25C |
| Continuous Drain Current | ID | -- | -- | 47 | A | TC=70C |
| Pulsed Drain Current | IDM | -- | -- | 177 | A | VGS=10V [2] |
| Single Pulse Avalanche Energy | EAS | -- | 32 | -- | mJ | VDD=25V, VGS=10V, RG=25, L=1mH |
| Power Dissipation | PD | -- | -- | 28 | W | -- |
| Operating and Storage Temperature Range | TJ and TSTG | -55 | -- | 150 | C | -- |
| Thermal Resistance, Junction-to-Ambient | RJA | -- | 45 | -- | C/W | -- |
| Thermal Resistance, Junction-to-Case | RJC | -- | 4.5 | -- | C/W | -- |
| Drain-to-Source Breakdown Voltage | BVDSS | 30 | -- | -- | V | VGS=0V, ID=250A |
| Drain-to-Source Leakage Current | IDSS | -- | -- | 1 | A | VDS=30V, VGS=0V |
| Gate-to-Source Leakage Current | IGSS | -- | -- | 100 | nA | VGS=20V, VDS=0V |
| Gate-to-Source Leakage Current | IGSS | -- | -- | -100 | nA | VGS=-20V, VDS=0V |
| Static Drain-to-Source On-Resistance | RDS(ON) | -- | 3.9 | 5.0 | m | VGS=10V, ID=8A [3] |
| Static Drain-to-Source On-Resistance | RDS(ON) | -- | 5.2 | 7.0 | m | VGS=4.5V, ID=5A [3] |
| Gate Threshold Voltage | VGS(TH) | 1.0 | -- | 2.0 | V | VDS = VGS, ID=250A |
| Input Capacitance | Ciss | -- | 1527 | -- | pF | VGS=0V, VDS=15V, f=1.0MHz |
| Output Capacitance | Coss | -- | 187 | -- | pF | VGS=0V, VDS=15V, f=1.0MHz |
| Reverse Transfer Capacitance | Crss | -- | 151 | -- | pF | VGS=0V, VDS=15V, f=1.0MHz |
| Total Gate Charge | Qg | -- | 33 | -- | nC | VDD=15V, VGS=10V, ID=6.5A |
| Gate-to-Source Charge | Qgs | -- | 7.4 | -- | -- | VDD=15V, VGS=10V, ID=6.5A |
| Gate-to-Drain (Miller) Charge | Qgd | -- | 7.1 | -- | -- | VDD=15V, VGS=10V, ID=6.5A |
| Turn-on Delay Time | td(on) | -- | 17 | -- | ns | VDD=15V, VGS=10V, RG=3.3, RL=2.3 |
| Rise Time | trise | -- | 51 | -- | ns | VDD=15V, VGS=10V, RG=3.3, RL=2.3 |
| Turn-off Delay Time | td(off) | -- | 42 | -- | ns | VDD=15V, VGS=10V, RG=3.3, RL=2.3 |
| Fall Time | tfall | -- | 16 | -- | ns | VDD=15V, VGS=10V, RG=3.3, RL=2.3 |
| Continuous Source Current | ISD | -- | -- | 28 | A | -- |
| Diode Forward Voltage | VSD | -- | -- | 1.0 | V | IS=1.0A,VGS=0V |
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