SOT23 package NPN transistor amsem MMBT3904 designed for general purpose amplification and operation
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Product Description
Product Overview
The MMBT3904 is an NPN general-purpose amplifier designed for surface mounting in a SOT-23 package. It offers a power dissipation capability of 200 mW and a collector current of 200 mA, with operating and storage junction temperatures ranging from -55 to 150. This RoHS compliant and Green EMC device is suitable for various amplification applications.
Product Attributes
- Brand: Anhui Anmei Semiconductor Co., Ltd.
- Device Marking Code: MMBT3904 1AM
- Certifications: RoHS compliant / Green EMC
- Package: SOT-23
Technical Specifications
| Parameter | Test Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | |||||
| Collector-Base Voltage (VCBO) | 60 | V | |||
| Collector-Emitter Voltage (VCEO) | 40 | V | |||
| Emitter-Base Voltage (VEBO) | 6 | V | |||
| Collector Current (IC) | 200 | mA | |||
| Collector Power Dissipation (PC) | 200 | mW | |||
| Thermal Resistance (RJA) | Junction To Ambient | 625 | /W | ||
| Junction Temperature (Tj) | 150 | ||||
| Storage Temperature (Tstg) | -55 | +150 | |||
| ELECTRICAL CHARACTERISTICS @ 25C Unless Otherwise Specified | |||||
| Collector-Emitter Breakdown Voltage (VCEO) | IC=1.0mA, IB=0 | 40 | V | ||
| Collector-Base Breakdown Voltage (VCBO) | IC=10A, IE=0 | 60 | V | ||
| Emitter-Base Breakdown Voltage (VEBO) | IE=10A, IC=0 | 6.0 | V | ||
| Collector Cutoff Current (ICBO) | VCB=30V, VBE=3.0V | 50 | nA | ||
| Collector Cutoff Current (ICEX) | VCE=30V, VBE=3.0V | 50 | nA | ||
| DC Current Gain (hFE) | IC=0.1mA,VCE=1.0V | 40 | |||
| DC Current Gain (hFE) | IC=1.0mA,VCE=1.0V | 70 | |||
| DC Current Gain (hFE) | IC=10mA, VCE=1.0V | 100 | |||
| DC Current Gain (hFE) | IC=50mA,VCE=1.0V | 60 | |||
| DC Current Gain (hFE) | IC=100mA,VCE=1.0V | 30 | |||
| Collector-Emitter Saturation Voltage (VCE(sat)) | IC=10mA,IB=1.0mA | 0.2 | V | ||
| Collector-Emitter Saturation Voltage (VCE(sat)) | IC=50mA,IB=5.0mA | 0.3 | V | ||
| Base-Emitter Saturation Voltage (VBE(sat)) | IC=10mA,IB=1.0mA | 0.65 | 0.85 | V | |
| Base-Emitter Saturation Voltage (VBE(sat)) | IC=50mA,IB=5.0mA | 0.95 | V | ||
| Current Gain-Bandwidth Product (fT) | IC=10mA, VCE=20V,f=100MHz | 300 | MHZ | ||
| Output Capacitance (Cobo) | VCB=5.0V, IE=0, f=1.0MHz | 4.0 | PF | ||
| Input Capacitance (Cibo) | VBE=0.5V, IC=0, f=1.0MHz | 8.0 | PF | ||
| Noise Figure (NF) | IC=100A, VCE=5.0V, RS=1.0k f=10Hz to 15.7kHz | 5.0 | dB | ||
| SWITCHING CHARACTERISTICS | |||||
| Delay Time (td) | VCC=3.0V,VBE=0.5V IC=10mA,IB1=1.0mA | 35 | ns | ||
| Rise Time (tr) | 35 | ns | |||
| Storage Time (ts) | VCC=3.0V,IC=10mA IB1=IB2=1.0mA | 200 | ns | ||
| Fall Time (tf) | 50 | ns | |||
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