Dual NPN transistor amsem MMDT5551 with rugged epoxy coating and UL 94 V0 flammability certification

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Product Description

Product Overview

The MMDT5551 is a dual NPN small signal transistor designed for switching and AF amplifier applications. It features a rugged and reliable construction, with epoxy meeting UL 94 V-0 flammability rating and a lead-free, RoHS-compliant finish.

Product Attributes

Brand: Anhui Anmei Semiconductor Co.,Ltd.
Origin: China
Material: Epoxy (UL 94 V-0 rated)
Certifications: UL 94 V-0 flammability rating, RoHS Compliant

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
VCBO	Collector-Base Voltage				180	V
VCEO	Collector-Emitter Voltage				160	V
VEBO	Emitter-Base Voltage				6	V
PC	Collector Power Dissipation				200	mW
IC	Collector Current - Continuous				200	mA
TJ	Junction Temperature				150
TSTG	Storage Temperature		-55		150
RJA	Thermal Resistance From Junction To Ambient			625		/W
V(BR)CBO	Collector-Base Breakdown Voltage	Ic=100A, IE=0	180			V
V(BR)CEO	Collector-Emitter Breakdown Voltage	Ic=1mA, IB=0	160			V
V(BR)EBO	Emitter-Base Breakdown Voltage	IE=10A, IC=0	6			V
ICBO	Collector Cut-Off Current	VCB=120V,IE=0			50	nA
IEBO	Emitter Cut-Off Current	VEB=4V , IC=0			50	nA
hFE	DC Current Gain	VCE=5V, IC=1mA	80
hFE	DC Current Gain	VCE=5V, IC=10mA		100	300
VCE(sat)	Collector-Emitter Saturation Voltage	IC=10mA, IB=1mA		0.15		V
VBE(sat)	Base-Emitter Saturation Voltage	IC=10mA, IB=1mA		1		V
fT	Transition Frequency	VCE=20V, IC=10mA, f=100MHz		100	300	MHz
Cob	Output Capacitance	VCB=5V, IE=0, f=1MHz			6	pF
NF	Noise Figure	VCE =5V, I C =200A, f=1KHz, RS =1K			8	dB