Dual NPN Small Signal Transistor amsem BC847BS Suitable for Switching and Audio Frequency Amplifier

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Product Description

Product Overview

The BC847BS is a dual NPN small signal transistor designed for switching and AF amplifier applications. It features a rugged and reliable construction with epoxy meeting UL 94 V-0 flammability rating and a lead-free, RoHS compliant finish. This device offers excellent performance characteristics for various electronic circuits.

Product Attributes

Brand: An hui Anmei Semiconductor Co.,Ltd.
Origin: China
Certifications: UL 94 V-0 flammability rating, RoHS Compliant
Device Marking Code: BC847BS 1C
Package Type: SOT363-6L
Ordering Information: BC847BS, Tape & Reel, 3000pcs /7 Reel, 8mm tape width, 4mm emboss pitch

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Units
VCBO	Collector-Base Voltage				50	V
VCEO	Collector-Emitter Voltage				45	V
VEBO	Emitter-Base Voltage				6	V
PC	Collector Power Dissipation				300	mW
IC	Collector Current				200	mA
TJ	Junction Temperature				150
TSTG	Storage Temperature		-55		150
RJA	Thermal Resistance from Junction to Ambient			417	/W
V(BR)CBO	Collector-base breakdown voltage	Ic=10A,IE=0	50			V
V(BR)CEO	Collector-emitter breakdown voltage	Ic=10mA,IB=0	45			V
V(BR)EBO	Emitter-base breakdown voltage	IE=10A,IC=0	6			V
ICBO	Collector cut-off current	VCB=30V,IE=0			15	nA
IEBO	Emitter-Base Cutoff Current	VEB =5V, IC=0			100	nA
hFE	DC current gain*	VCE=5V,IC=2mA	200	450
VCE(sat)	Collector-emitter saturation voltage	IC=10mA,IB=0.5mA		0.25		V
VCE(sat)	Collector-emitter saturation voltage	IC=100mA,IB=5mA			0.65	V
VBE(sat)	Base-emitter voltage	IC=10mA,IB=0.5mA		0.9		V
VBE(sat)	Base-emitter voltage	IC=100mA,IB=5mA			0.7	V
VBE	Base-Emitter Voltage	VCE=5V, IC=2mA	0.58	0.665	0.7	V
fT	Transition Frequency	VCE=5V, IC=10mA, f=100MHz		200		MHz
Cob	Output Capacitance	VCB=10V, IE=0, f=1MHz			2	pF