General purpose NPN transistor amsem MMBT5551 featuring wide storage temperature and RoHS compliance

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Product Description

Product Overview

The MMBT5551 is an NPN general-purpose amplifier designed for surface mount applications. It offers a power dissipation capability of 300mW and operates within a wide temperature range. This device is RoHS compliant and available in a green EMC SOT-23 package.

Product Attributes

Brand: Anhui Anmei Semiconductor Co., Ltd.
Origin: China
Certification: RoHS compliant / Green EMC
Package: SOT-23

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Max	Unit
VCBO	Collector-Base Voltage			180	V
VCEO	Collector-Emitter Voltage			160	V
VEBO	Emitter-Base Voltage			6	V
IC	Collector Current			600	mA
PC	Collector Power Dissipation			300	mW
RJA	Thermal Resistance From Junction To Ambient			416	/W
Tj	Junction Temperature			150
Tstg	Storage Temperature		-55	+150
VCEO	Collector-emitter breakdown voltage	IC=1.0mA, IB=0	160		V
VCBO	Collector-base breakdown voltage	IC=100A, IE=0	180		V
VEBO	Emitter-base breakdown voltage	IE=10A, IC=0	6.0		V
ICBO	Collector cutoff current	VCB=120V, IE=0V		50	nA
IEBO	Emitter cut-off current	VEB=4V,IC=0V		50	nA
hFE	DC current gain	IC=1mA,VCE=5V	80
hFE	DC current gain	IC=10mA,VCE=5V	100	300
hFE	DC current gain	IC=50mA,VCE=5V	50
VCE(sat)	Collector-emitter saturation voltage	IC=10mA,IB=1.0mA		0.15	V
VCE(sat)	Collector-emitter saturation voltage	IC=50mA,IB=5.0mA		0.2	V
VBE(sat)	Base-emitter saturation voltage	IC=10mA,IB=1.0mA		1.0
VBE(sat)	Base-emitter saturation voltage	IC=50mA,IB=5.0mA		1.0
fT	Current gain-bandwidth Product	IC=10mA, VCE=10V,f=100MHz	100	300	MHZ
COb	Collector output capacitance	VCB=10V,IE=0,f=1MHZ		6	pF