General purpose amplifier transistor amsem MMBT2222A with 300mW power dissipation in SOT 23 package
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Product Description
Product Overview
The MMBT2222A is an NPN general-purpose amplifier designed for various electronic applications. It offers a power dissipation capability of 300mW and operates within a wide temperature range of -55 to 150. This device comes in a surface-mount SOT-23 package and is RoHS compliant.
Product Attributes
- Device Marking Code: MMBT2222A
- Origin: Anhui Anmei Semiconductor Co.,Ltd.
- Certifications: RoHS compliant / Green
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| MAXIMUM RATINGS | |||||
| VCBO | Collector-Base Voltage | 75 | V | ||
| VCEO | Collector-Emitter Voltage | 40 | V | ||
| VEBO | Emitter-Base Voltage | 6 | V | ||
| IC | Collector Current | 600 | mA | ||
| PC | Collector Power Dissipation | (Ta=25) | 300 | mW | |
| RJA | Thermal Resistance From Junction To Ambient | 417 | /W | ||
| Tj | Junction Temperature | 150 | |||
| Tstg | Storage Temperature | -55+150 | |||
| ELECTRICAL CHARACTERISTICS @ 25C Unless Otherwise Specified | |||||
| VCEO | Collector-Emitter Breakdown Voltage | IC=10mA, IB=0 | 40 | V | |
| VCBO | Collector-Base Breakdown Voltage | IC=10A, IE=0 | 75 | V | |
| VEBO | Emitter-Base Breakdown Voltage | IE=10A, IC=0 | 6.0 | V | |
| ICEX | Collector Cutoff Current | VCE=60V, VBE=3.0V | 10 | nA | |
| hFE | DC Current Gain | IC=0.1mA,VCE=10V | 35 | ||
| IC=1.0mA,VCE=10V | 50 | ||||
| IC=10mA, VCE=10V | 75 | ||||
| IC=150mA,VCE=10V | 100 | ||||
| IC=150mA,VCE=10V | 50 | ||||
| IC=500mA,VCE=10V | 40 | ||||
| VCE(sat) | Collector-Emitter Saturation Voltage | IC=150mA,IB=15mA | 0.3 | V | |
| IC=500mA,IB=50mA | 1.0 | V | |||
| VBE(sat) | Base-Emitter Saturation Voltage | IC=150mA,IB=15mA | 0.6 | ||
| IC=500mA,IB=50mA | 1.2 | ||||
| 2.0 | V | ||||
| fT | Current Gain-Bandwidth Product | IC=20mA, VCE=20V,f=100MHz | 300 | MHZ | |
| Ccb | Collector-Base Capacitance | VCB=10V, IE=0, f=1.0MHz | 8.0 | PF | |
| Ceb | Emitter-Base Capacitance | VBE=0.5V, IC=0, f=1.0MHz | 25 | PF | |
| SWITCHING CHARACTERISTICS | |||||
| td | Delay Time | VCC=30V,VBE=0.5V IC=150mA,IB1=15mA | 10 | ns | |
| tr | Rise Time | 25 | ns | ||
| ts | Storage Time | VCC=30V,IC=150mA B1=IB2=15mA | 225 | ns | |
| tf | Fall Time | 60 | ns | ||
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