surface mount fast switching diode amsem MMBD4148 with RoHS compliance and low current leakage features

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Product Description

Product Overview

The MMBD4148/CA/CC/SE is a series of fast switching diodes designed for general-purpose switching applications. These diodes offer high conductance, low current leakage, and are available in a small outline surface mount package. They are RoHS compliant and available as Green EMC devices.

Product Attributes

Brand: An hui Anmei Semiconductor Co.,Ltd.
Certifications: RoHS compliant / Green EMC Device
Package: SOT23

Technical Specifications

Device	Marking Code	Continuous Reverse Voltage (VR)	Non Repetitive Peak Reverse Voltage (VRRM)	Forward Continuous Current (IFM)	Average Rectified Output Current (IO)	Non-R Repetitive Peak Forward Surge Current @8.3mS (IFSM)	Power Dissipation (PD)	Thermal Resistance Junction to Ambient (RJA)	Storage Temperature Range (TSTG)	Junction Temperature (TJ)	Reverse Breakdown Voltage (VR)	Forward Voltage (VF)	Reverse Voltage Leakage Current (IR)	Typical Junction Capacitance (CJ)	Reverse Recovery Time (Trr)
MMBD4148	KA2	75 V	100 V	250 mA	200 mA	2 A	350 mW	357 /W	-55~+150	150	100 V (IR=100uA) / 75 V (IR=5uA)	0.715 V (IF=1mA) / 0.855 V (IF=10mA) / 1 V (IF=50mA) / 1.25 V (IF=150mA)	25 nA (VR=20V) / 1 uA (VR=75V)	2 pF (VR=0V, f=1.0MHz)	4 nS (IF=IR=10mA,Irr=0.1mA, RL=100)
MMBD4148CA	D6	75 V	100 V	250 mA	200 mA	2 A	350 mW	357 /W	-55~+150	150	100 V (IR=100uA) / 75 V (IR=5uA)	0.715 V (IF=1mA) / 0.855 V (IF=10mA) / 1 V (IF=50mA) / 1.25 V (IF=150mA)	25 nA (VR=20V) / 1 uA (VR=75V)	2 pF (VR=0V, f=1.0MHz)	4 nS (IF=IR=10mA,Irr=0.1mA, RL=100)
MMBD4148CC	D5	75 V	100 V	250 mA	200 mA	2 A	350 mW	357 /W	-55~+150	150	100 V (IR=100uA) / 75 V (IR=5uA)	0.715 V (IF=1mA) / 0.855 V (IF=10mA) / 1 V (IF=50mA) / 1.25 V (IF=150mA)	25 nA (VR=20V) / 1 uA (VR=75V)	2 pF (VR=0V, f=1.0MHz)	4 nS (IF=IR=10mA,Irr=0.1mA, RL=100)
MMBD4148SE	D4	75 V	100 V	250 mA	200 mA	2 A	350 mW	357 /W	-55~+150	150	100 V (IR=100uA) / 75 V (IR=5uA)	0.715 V (IF=1mA) / 0.855 V (IF=10mA) / 1 V (IF=50mA) / 1.25 V (IF=150mA)	25 nA (VR=20V) / 1 uA (VR=75V)	2 pF (VR=0V, f=1.0MHz)	4 nS (IF=IR=10mA,Irr=0.1mA, RL=100)