General purpose switching diode amsem BAV99 with fast switching speed and low leakage current design

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The BAV99 is a high-performance switching diode designed for general-purpose switching applications. It features fast switching speed, high conductance, and low current leakage, all within a small outline surface mount package. This device is RoHS compliant and available as a Green EMC device.

Product Attributes

Brand: Anhui Anmei Semiconductor Co., Ltd.
Origin: China
Certifications: RoHS compliant / Green EMC Device
Package: Small Outline Surface Mount Package (SOT23)

Technical Specifications

Device	Parameter	Value	Units	Test Conditions
BAV99	Reverse Voltage (VR)	70	V
	Forward Current (IF)	200	mA
	Thermal Resistance Junction to Ambient (RJA)	556	/W
	Non-Repetitive Peak Forward Surge Current (IFSM)	2.0	A	*1 8.3 ms single half sine-wave
	Power Dissipation (PD)	225	mW
	Junction Temperature (TJ)	150
	Storage Temperature (TSTG)	-55 to 150
	Reverse breakdown voltage	75	V	IR=100uA
BAV99	Forward Voltage (VF)	0.715	V	IF=1mA
	Forward Voltage (VF)	0.855	V	IF=10mA
	Forward Voltage (VF)	1	V	IF=50mA
	Forward Voltage (VF)	1.25	V	IF=150mA
	Reverse voltage leakage current (IR)	2.5	uA	VR=70V
BAV99	Capacitance between terminals (CT)	2	pF	VR=0V, f=1MHz
BAV99	Reverse recovery time (Trr)	6	nS	IF= IR=10mA Irr=0.1IR , RL=100