N Channel MOSFET TO263 Package 6 Milliohm RDS on 240 Amp Pulse Current ANHI AUB060N08AG Suitable for DC DC Converters
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Product Description
Product Overview
The AUA060N08AG series are N-Channel MOSFETs designed for synchronous rectification and high-speed switching applications. These devices are suitable for DC/DC converters, SMPS, high-speed circuits, and industrial telecom applications. Key features include low drain-source on-resistance, high-speed switching, enhanced body diode, and rugged avalanche ruggedness.
Product Attributes
- Brand: AUA (implied by part naming convention)
- Channel Type: N-Channel
Technical Specifications
| Part Name | Package | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) | VDS @ Tj,max (V) | Marking |
|---|---|---|---|---|---|---|
| AUA060N08AG | TO220F | 6.0 | 55.7 | 240 | 80 | 8AG |
| AUB060N08AG | TO263 | 6.0 | 55.7 | 240 | 80 | 8AG |
| AUP060N08AG | TO220 | 6.0 | 55.7 | 240 | 80 | 8AG |
| AUN060N08AG | DFN5x6 | 6.0 | 55.7 | 240 | 80 | 8AG |
| AUD060N08AG | TO252 | 6.0 | 55.7 | 240 | 80 | 8AG |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 80 | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 3.4 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | 1000 | nA | VDS=80V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | 100 | nA | VGS=20V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 6.0 | m | VGS=10V, ID=20A, Tj=25C |
| Gate resistance (Intrinsic) | RG | 1.2 | f=1MHz, open drain | |
| Input capacitance | Ciss | 3730 | pF | Vds=40V,Vgs=0V, f=1MHz |
| Output capacitance | Coss | 674 | pF | Vds=40V,Vgs=0V, f=1MHz |
| Reverse transfer capacitance | Crss | 24.24 | pF | Vds=40V,Vgs=0V, f=1MHz |
| Turn-on delay time | td(on) | 16.5 | ns | VDD=40V,VGS=10V,RG=10, ID=20A |
| Rise time | tr | 13.7 | ns | VDD=40V,VGS=10V,RG=10, ID=20A |
| Turn-off delay time | td(off) | 35.9 | ns | VDD=40V,VGS=10V,RG=10, ID=20A |
| Fall time | tf | 13.45 | ns | VDD=40V,VGS=10V,RG=10, ID=20A |
| Gate to source charge | Qgs | 15.9 | nC | VDS=40V,VGS=0 to 10V, ID=20A |
| Gate to drain charge | Qgd | 13.3 | nC | VDS=40V,VGS=0 to 10V, ID=20A |
| Gate charge total | Qg | 55.7 | nC | VDS=40V,VGS=0 to 10V, ID=20A |
| Diode forward voltage | VSD | 0.7 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | 40.9 | ns | VR=40V,IF=20A, diF/dt=200A/us |
| Reverse recovery charge | Qrr | 106.8 | uC | VR=40V,IF=20A,diF/dt=200A/us |
| Peak reverse recovery current | Irrm | -3.7 | A | VR=40V,IF=20A,diF/dt=200A/us |
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