Silicon Carbide MOSFET AOS AOK50B65GL1 suitable for EV chargers solar inverters and SMPS applications
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Product Description
Product Overview
The AOK500V120X2 is a 1200 V Silicon Carbide (SiC) Power MOSFET from Alpha & Omega Semiconductor, engineered with proprietary SiC MOSFET technology. It offers low conduction and switching losses due to its low RDS(ON), fast switching speeds, low gate resistance (RG), and low capacitance. Optimized for a gate drive voltage of 15 V, this MOSFET also features a low reverse recovery charge (Qrr). It is well-suited for demanding applications in renewable energy and industrial sectors, including EV chargers, UPS systems, solar inverters, SMPS, and motor drives.
Product Attributes
- Brand: ALPHA & OMEGA SEMICONDUCTOR
- Technology: Proprietary SiC MOSFET
- Material: Silicon Carbide (SiC)
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Product Summary | |||||
| VDS @ TJ, max | 1200 | V | |||
| IDM | 10 | A | |||
| RDS(ON), typ | VGS = 15 V, ID = 1.2 A | 500 | 675 | m | |
| Qrr | 50 | nC | |||
| EOSS @ 800 V | 6 | J | |||
| Absolute Maximum Ratings | TA = 25 C, unless otherwise specified. | ||||
| VDS | Drain-Source Voltage | 1200 | V | ||
| VGS,MAX | Gate-Source Voltage Maximum | -8 | +18 | V | |
| VGS,OP,TRANS | Max Transient | -8 | +20 | V | |
| VGS,OP | Recommended Operating | -5 | +15 | V | |
| ID | Continuous Drain Current, TC = 25C | 6.3 | A | ||
| ID | Continuous Drain Current, TC = 100C | 4.5 | A | ||
| IDM | Pulsed Drain Current | 10 | A | ||
| EAS | Single Pulsed Avalanche Energy | 40 | mJ | ||
| PD | Power Dissipation, TC = 25C | 44 | W | ||
| TJ, TSTG | Junction and Storage Temperature Range | -55 | 175 | C | |
| TL | Maximum lead temperature for soldering, 1/8 from case for 5 seconds | 300 | C | ||
| Thermal Characteristics | |||||
| RJA | Maximum Junction-to-Ambient | 40 | C/W | ||
| RJC | Maximum Junction-to-Case | 3.4 | C/W | ||
| Electrical Characteristics | TA = 25 C, unless otherwise specified. | ||||
| BVDSS | Drain-Source Breakdown Voltage, ID = 250 A, VGS = 0 V, TJ = 25C | 1200 | V | ||
| BVDSS | Drain-Source Breakdown Voltage, ID = 250 A, VGS = 0 V, TJ = 150C | 1200 | V | ||
| IDSS | Zero Gate Voltage Drain Current, VDS = 1200 V, VGS = 0 V | 100 | A | ||
| IGSS | Gate-Body Leakage Current, VDS = 0 V, VGS = +15/-5 V | +/-100 | nA | ||
| VGS(th) | Gate Threshold Voltage, VDS = VGS, ID = 1.2 mA | 1.8 | 2.8 | 3.5 | V |
| RDS(ON) | Static Drain-Source On-Resistance, VGS = 15 V, ID = 1.2 A, TJ = 25C | 500 | 675 | m | |
| RDS(ON) | Static Drain-Source On-Resistance, VGS = 15 V, ID = 1.2 A, TJ = 150C | 700 | m | ||
| gFS | Forward Transconductance, VDS = 20 V, ID = 1.2 A | 0.55 | S | ||
| VSD | Diode Forward Voltage, IS = 1.2 A, VGS = -5V | 4 | 5 | V | |
| Ciss | Input Capacitance, VGS = 0 V, VDS = 800 V, f = 1 MHz | 206 | pF | ||
| Coss | Output Capacitance, VGS = 0 V, VDS = 800 V, f = 1 MHz | 13.5 | pF | ||
| Crss | Reverse Transfer Capacitance, VGS = 0 V, VDS = 800 V, f = 1 MHz | 1.6 | pF | ||
| Eoss | Coss Stored Energy, VGS = 0 V, VDS = 800 V, f = 1 MHz | 6 | J | ||
| Rg | Gate Resistance, f = 1 MHz | 5.8 | |||
| Qg | Total Gate Charge, VGS = -5/+15 V, VDS = 800 V, ID = 1.2 A | 12 | nC | ||
| Qgs | Gate Source Charge, VGS = -5/+15 V, VDS = 800 V, ID = 1.2 A | 2.6 | nC | ||
| Qgd | Gate Drain Charge, VGS = -5/+15 V, VDS = 800 V, ID = 1.2 A | 7.6 | nC | ||
| td(on) | Turn-On Delay Time, VGS = -5 V/+15 V, VDS = 800 V, ID = 3 A, RG,ON = 2 , RG,OFF = 0 , L = 120 H | 5 | ns | ||
| tr | Turn-On Rise Time, VGS = -5 V/+15 V, VDS = 800 V, ID = 3 A, RG,ON = 2 , RG,OFF = 0 , L = 120 H | 15 | ns | ||
| td(off) | Turn-Off Delay Time, VGS = -5 V/+15 V, VDS = 800 V, ID = 3 A, RG,ON = 2 , RG,OFF = 0 , L = 120 H | 8.6 | ns | ||
| tf | Turn-Off Fall Time, VGS = -5 V/+15 V, VDS = 800 V, ID = 3 A, RG,ON = 2 , RG,OFF = 0 , L = 120 H | 23 | ns | ||
| Eon | Turn-On Energy, VGS = -5 V/+15 V, VDS = 800 V, ID = 3 A, RG,ON = 2 , RG,OFF = 0 , L = 120 H | 57 | J | ||
| Eoff | Turn-Off Energy, VGS = -5 V/+15 V, VDS = 800 V, ID = 3 A, RG,ON = 2 , RG,OFF = 0 , L = 120 H | 13 | J | ||
| Etot | Total Switching Energy, VGS = -5 V/+15 V, VDS = 800 V, ID = 3 A, RG,ON = 2 , RG,OFF = 0 , L = 120 H | 70 | J | ||
| trr | Body Diode Reverse Recovery Time, IF = 3 A, dI/dt = 1500 A/s, VDS = 800 V | 45 | ns | ||
| Irm | Peak Reverse Recovery Current, IF = 3 A, dI/dt = 1500 A/s, VDS = 800 V | 2.9 | A | ||
| Qrr | Body Diode Reverse Recovery Charge, IF = 3 A, dI/dt = 1500 A/s, VDS = 800 V | 50 | nC | ||
| Pin Configuration | |||||
| Part Number | AOK500V120X2 | ||||
| Package Type | TO-247-3L | ||||
| Form | Tube | ||||
| Shipping Quantity | 30/Tube |
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