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Soft recovery diode 650V 10A AlphaIGBT AOS AOB10B65M1 suitable for sewing machines fan and home appliances

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Product Description

Product Overview

The AOT10B65M1/AOB10B65M1 is a 650V, 10A Alpha IGBT featuring a soft and fast recovery anti-parallel diode. This component utilizes the latest AlphaIGBT ( IGBT) technology, offering a 650V breakdown voltage and a very fast and soft recovery freewheeling diode. It provides high efficient turn-on di/dt controllability, low VCE(SAT) for high efficiencies, and low turn-off switching loss with softness. The IGBT also boasts very good EMI behavior and high short-circuit ruggedness. It is suitable for applications such as Motor Drives, Sewing Machines, Home Appliances, Fan, Pumps, Vacuum Cleaners, and other Hard Switching Applications.

Product Attributes

  • Brand: AOS
  • Technology: AlphaIGBT ( IGBT)

Technical Specifications

Parameter Conditions AOT10B65M1/AOB10B65M1 Units
Absolute Maximum Ratings
Collector-Emitter Voltage TA=25C unless otherwise noted 650 V
Collector-Emitter Breakdown Voltage 650 V
Gate-Emitter Voltage 30 V
Continuous Collector Current TC=25C 30 A
TC=100C 10 A
Pulsed Collector Current Limited by TJmax 30 A
Continuous Diode Forward Current TC=25C 20 A
TC=100C 10 A
Diode Pulsed Current Limited by TJmax 30 A
Power Dissipation TC=25C 300 W
Short circuit withstanding time 1) VGE=15V, VCC400V, TJ175C 5 ms
Junction and Storage Temperature Range -55 to 175 C
Maximum lead temperature for soldering purpose 1/8" from case for 5 seconds 150 C
Thermal Characteristics
Maximum IGBT Junction-to-Case 1.6 C/W
Maximum Diode Junction-to-Case 3.3 C/W
Maximum Junction-to-Ambient 65 C/W
Electrical Characteristics (TJ=25C unless otherwise noted)
Collector-Emitter Saturation Voltage VGE=15V, IC=10A 1.6 V
TJ=125C 1.86 V
TJ=175C 2.02 V
VGE=15V, IC=10A 1.9 V
TJ=125C 1.96 V
TJ=175C 1.91 V
Gate-Emitter Threshold Voltage VCE=20V, IC=1mA 4.5 - 5.7 V
Zero Gate Voltage Collector Current VCE=650V, VGE=0V 10 mA
TJ=125C 100 mA
TJ=175C 1000 mA
Gate-Emitter leakage current VGE=0V, VCE=30V 100 nA
Diode Forward Voltage IF=10A, TJ=25C 1.9 V
TJ=175C 1.91 V
IF=10A, TJ=25C 2.4 V
TJ=175C 1.91 V
Dynamic Parameters
Input Capacitance VGE=0V, VCC=25V, f=1MHz 655 pF
Output Capacitance VCE=20V, IC=10A 68 pF
Reverse Transfer Capacitance VCE=5V, IC=1mA 25 pF
Total Gate Charge VGE=15V, VCC=520V, IC=10A 24 nC
Gate to Emitter Charge 5.5 nC
Gate to Collector Charge 12 nC
Short circuit collector current VGE=15V, VCC=400V, tsc5us, TJ175C 70 A
Gate resistance VGE=0V, VCC=0V, f=1MHz 5.8
Switching Parameters (Load Inductive, TJ=25C)
Turn-On Delay Time VGE=15V, VCC=400V, IC=10A, RG=30W 12 ns
Turn-On Rise Time 16 ns
Turn-Off Delay Time 91 ns
Turn-Off Fall Time 14 ns
Turn-On Energy 0.18 mJ
Turn-Off Energy 0.13 mJ
Total Switching Energy 0.31 mJ
Switching Parameters (Load Inductive, TJ=175C)
Turn-On Delay Time VGE=15V, VCC=400V, IC=10A, RG=30W 10 ns
Turn-On Rise Time 17 ns
Turn-Off Delay Time 111 ns
Turn-Off Fall Time 26 ns
Turn-On Energy 0.2 mJ
Turn-Off Energy 0.23 mJ
Total Switching Energy 0.43 mJ
Diode Reverse Recovery Parameters (TJ=25C)
Diode Reverse Recovery Time IF=10A, di/dt=200A/ms, VCC=400V 263 ns
Diode Reverse Recovery Charge 0.4 mC
Diode Peak Reverse Recovery Current 3.8 A
Diode Reverse Recovery Parameters (TJ=175C)
Diode Reverse Recovery Time IF=10A, di/dt=200A/ms, VCC=400V 262 ns
Diode Reverse Recovery Charge 0.7 mC
Diode Peak Reverse Recovery Current 5 A
Package Type & Orderable Part Number
Package Type TO220 / TO-263 D2PAK
Form Tube 1000 Minimum Order Quantity
Tape & Reel 800 Minimum Order Quantity
Orderable Part Number AOT10B65M1 / AOB10B65M1

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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