High Voltage 350V P Channel MOSFET ARK micro FTZ30P35G Designed for Adaptors Chargers and Active PFC
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Product Description
ARK Microelectronics FTZ30P35G 350V P-Channel MOSFET
The ARK Microelectronics FTZ30P35G is a 350V P-Channel MOSFET featuring ESD improved capability, proprietary advanced planar technology, and a rugged polysilicon gate cell structure. It offers fast switching speed and is RoHS compliant, with a halogen-free option available. This MOSFET is suitable for high efficiency SMPS, adaptors, chargers, and active PFC applications.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Origin: P. R. China
- Certifications: RoHS Compliant, Halogen-free available
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSX | -350 | V | TA=25 unless otherwise specified | ||
| Drain-to-Gate Voltage | VDGX | -350 | V | TA=25 unless otherwise specified | ||
| Continuous Drain Current | ID | -0.2 | A | TA=25 unless otherwise specified | ||
| Pulsed Drain Current | IDM | -0.6 | A | [2] | ||
| Power Dissipation | PD | 0.50 | W | TA=25 unless otherwise specified | ||
| Gate-to-Source Voltage | VGS | 20 | V | TA=25 unless otherwise specified | ||
| Gate Source ESD | VESD(G-S) | 350 | V | IEC, C=150pF, R=330 | ||
| Soldering Temperature | TL | 300 | Distance of 1.6mm from case for 10 seconds | |||
| Operating and Storage Temperature Range | TJ and TSTG | -55 | 150 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | 250 | K/W | |||
| Drain-to-Source Breakdown Voltage | BVDSX | -350 | V | VGS=0V, ID=-250A | ||
| Breakdown Voltage Temperature Coefficient | BVDSS/TJ | -0.35 | V/ | Reference to 25, ID=-250A | ||
| Drain-to-Source Leakage Current | IDSS | -1 | A | VDS=-350VVGS= 0V | ||
| Drain-to-Source Leakage Current | IDSS | -100 | uA | VDS=-350VVGS= 0V TJ=125 | ||
| Gate-to-Source Leakage Current | IGSS | 20 | uA | VGS=+20V, VDS=0V | ||
| Gate-to-Source Leakage Current | IGSS | -20 | VGS=-20V, VDS=0V | |||
| Static Drain-to-Source On-Resistance | RDS(ON) | 18 | 30 | VGS=-10VID=-200mA [3] | ||
| Gate Threshold Voltage | VGS(TH) | -1 | -3 | V | VGD =0V, ID=-250A | |
| Input Capacitance | CISS | 43.39 | pF | VGS=0V VDS=-25V f=1.0MHZ | ||
| Oput Capacitance | COSS | 6.94 | VGS=0V VDS=-25V f=1.0MHZ | |||
| Reverse Transfer Capacitance | CRSS | 0.84 | VGS=0V VDS=-25V f=1.0MHZ | |||
| Turn-on Delay Time | td(ON) | 12 | ns | VGS = -10V~0V VDD = -25V, ID=-80mA RG = 25Ohm | ||
| Rise Time | trise | 60 | VGS = -10V~0V VDD = -25V, ID=-80mA RG = 25Ohm | |||
| Turn-off Delay Time | td(OFF) | 136 | VGS = -10V~0V VDD = -25V, ID=-80mA RG = 25Ohm | |||
| Fall Time | tfall | 320 | VGS = -10V~0V VDD = -25V, ID=-80mA RG = 25Ohm | |||
| Diode Forward Voltage | VSD | -1.8 | V | ISD =-200 mA, VGS =0 V |
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