150V P Channel Enhancement Mode MOSFET ARK micro FTP02P15G with 100 watt power dissipation capability
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Product Description
ARK Microelectronics FTE02P15G/FTP02P15G - 150V P-Channel Enhancement Mode MOSFET
The FTE02P15G and FTP02P15G are 150V P-Channel Enhancement Mode MOSFETs from ARK Microelectronics. They feature a high-density cell design for low RDS(ON) and a rugged polysilicon gate cell structure. These MOSFETs are suitable for applications such as reset switches for active clamp reset and DC-DC converters. They are RoHS compliant and available in Halogen-free versions, with 100% avalanche testing.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Origin: Chengdu, Sichuan
- Certifications: RoHS Compliant, Halogen-free Available
Technical Specifications
| Part Number | Package | Drain-to-Source Voltage (VDSX) | Continuous Drain Current (ID) | Pulsed Drain Current (IDM) | Power Dissipation (PD) | RDS(ON) (Typ.) | Gate-to-Source Voltage (VGS) | Operating & Storage Temperature (TJ/TSTG) |
|---|---|---|---|---|---|---|---|---|
| FTE02P15G | SOP-8 | -150V | -2.3A | -9.2A | 2.5W | 0.20 | 20V | -55 to 150 |
| FTP02P15G | TO-220AB | -150V | -15A | -60A | 100W | 0.20 | 20V | -55 to 150 |
Electrical Characteristics
| Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage (BVDSX) | VGS=0V, IDS=-250A | -150 | -- | -- | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=-150VVGS=0V | -- | -- | -1 | A |
| Gate-to-Source Leakage Current (IGSS) | VGS=+20V, VDS=0V | -- | -- | 100 | nA |
| Gate-to-Source Leakage Current (IGSS) | VGS=-20V, VDS=0V | -- | -- | -100 | nA |
| Static Drain-to-Source On-Resistance (RDS(ON)) | VGS=-10VIDS=-1.3A [4] | -- | 0.20 | 0.30 | |
| Gate Threshold Voltage (VGS(th)) | VGD=0V, IDS=-250A | -1.8 | -- | -4.0 | V |
| Forward Transconductance (gfs) | VDS=-50V, IDS=-1.3A | -- | 4.5 | -- | S |
| Input Capacitance (Ciss) | VGS=0V VDS=-25V f=1.0MHZ | -- | 1420 | -- | pF |
| Output Capacitance (Coss) | VGS=0V VDS=-25V f=1.0MHZ | -- | 180.5 | -- | pF |
| Reverse Transfer Capacitance (Crss) | VGS=0V VDS=-25V f=1.0MHZ | -- | 38.4 | -- | pF |
| Total Gate Charge (Qg) | VDS=-120V ID=-1.3A VGS=-10V | -- | 35.1 | -- | nC |
| Gate-to-Source Charge (Qgs) | VDS=-120V ID=-1.3A VGS=-10V | -- | 9.6 | -- | nC |
| Gate-to-Drain (Miller) Charge (Qgd) | VDS=-120V ID=-1.3A VGS=-10V | -- | 13.8 | -- | nC |
| Turn-on Delay Time (td(on)) | VGS=-10V VDD=-75V RG=6.5 ID=-1.3A | -- | 16.5 | -- | ns |
| Rise Time (trise) | VGS=-10V VDD=-75V RG=6.5 ID=-1.3A | -- | 14.6 | -- | ns |
| Turn-off Delay Time (td(off)) | VGS=-10V VDD=-75V RG=6.5 ID=-1.3A | -- | 35.0 | -- | ns |
| Fall Time (tfall) | VGS=-10V VDD=-75V RG=6.5 ID=-1.3A | -- | 24.6 | -- | ns |
| Diode Forward Voltage (VSD) | ISD=1.3A, VGS=0V | -- | -- | 1.5 | V |
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