High Reliability Silicon Carbide Schottky Diode Bestirpower BCH120S10D2 for Power Conversion Systems
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Product Description
Product Overview
The BCH120S10D2 is a 1200V, 10A Silicon Carbide Schottky Diode from Bestirpower, leveraging advanced SiC diode technology. It offers excellent low forward voltage and robustness, making it suitable for applications demanding high power efficiency. Key benefits include higher frequency operation, reduced heat dissipation, smaller system size and cost, and high reliability. This diode is ideal for switch mode power supplies, solar inverters, data centers, and uninterruptible power supplies, featuring negligible reverse recovery, high-speed switching, and a positive temperature coefficient for temperature-independent switching.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide (SiC)
- Technology: Schottky Diode
- Compliance: RoHS compliant
Technical Specifications
| Model | VRRM (V) | IF (A) | TJ,max (C) | QC (nC) | Top Marking | Package | Packing Method | Quantity |
|---|---|---|---|---|---|---|---|---|
| BCH120S10D2 | 1200 | 10 | 175 | 52 | BCH120S10D2 | TO247-2 | Tube | 50 units |
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC = 25 unless otherwise noted) | ||||||
| VRRM | Repetitive Peak Reverse Voltage | 1200 | V | |||
| IF | Forward Current | TC = 25 | 35 | A | ||
| IF | Forward Current | TC = 135 | 17 | A | ||
| IF | Forward Current | TC = 158 | 10 | A | ||
| IF,SM | Non-Repetitive Forward Surge Current | TC = 25, tp = 10 ms | 59 | A | ||
| IF,SM | Non-Repetitive Forward Surge Current | TC = 110, tp = 10 ms | 45 | A | ||
| IF,RM | Repetitive Peak Forward Surge Current | TC = 25, tp = 10 ms | 50 | A | ||
| I2dt | I2dt value | TC = 25, tp = 10 ms | 17 | As | ||
| I2dt | I2dt value | TC = 110, tp = 10 ms | 10 | As | ||
| Ptot | Power Dissipation | TC = 25 | 191 | W | ||
| Ptot | Power Dissipation | TC = 110 | 83 | W | ||
| Ptot | Power Dissipation | TC = 150 | 32 | W | ||
| TJ,TSTG | Operating Junction and Storage Temperature | -55 | +175 | |||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, Typ. | 0.787 | /W | |||
| Electrical Characteristics (TC = 25 unless otherwise noted) | ||||||
| VDC | DC blocking voltage | 1200 | - | - | V | |
| VF | Forward Voltage | IF=5A | - | 1.20 | - | V |
| VF | Forward Voltage | IF=10ATc=25 | - | 1.43 | 1.70 | V |
| VF | Forward Voltage | IF=10ATc=175 | - | 2.0 | - | V |
| IR | Reverse Current | VR = 1200 V, TC = 25 | - | 2.0 | 60 | A |
| IR | Reverse Current | VR = 1200 V, TC = 175 | - | 4.0 | - | A |
| QC | Total Capacitive Charge | VR = 800 V, TC = 25 | - | 52 | - | nC |
| C | Total Capacitance | VR = 1 V, f = 1MHz | - | 546 | - | pF |
| C | Total Capacitance | VR = 400 V, f = 1MHz | - | 47 | - | pF |
| C | Total Capacitance | VR = 800 V, f = 1MHz | - | 41 | - | pF |
| EC | Capacitance Stored Energy | VR = 800 V, TC = 25 | - | 15.86 | - | J |
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