Low gate to source cut off voltage 600V MOSFET ARK micro DMZ6001E for telecom and amplifier circuits
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Product Description
DMZ6001E Provisional Datasheet
The DMZ6001E is a 600V N-Channel Depletion Mode Power MOSFET from ARK Microelectronics. It features a low gate-to-source cut-off voltage, a depletion mode (normally-on) operation, and is built using proprietary advanced planar technology with a rugged polysilicon gate cell structure. This MOSFET offers fast switching speeds and is RoHS compliant, with a halogen-free option available. It is suitable for applications such as SMPS start-up circuits, linear amplifiers, constant current sources, and telecom systems.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Product Code: DMZ6001E
- Certifications: RoHS Compliant, Halogen-free available
- Origin: Chengdu, Sichuan
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSX | 600 | -- | -- | V | VGS = -5V, ID = 250A |
| Drain-to-Source Leakage Current | ID(off) | -- | -- | 1 | A | VDS = 600V, VGS = -5V |
| Gate-to-Source Leakage Current | IGSS | -- | -- | 5 | A | VGS = 20V, VDS = 0V |
| Saturated Drain-to-Source Current | IDSS | 2 | -- | 20 | mA | VGS = 0V, VDS = 25V |
| Static Drain-to-Source On-Resistance | RDS(on) | -- | 110 | 200 | VGS = 0V, ID = 2mA | |
| Gate-to-Source Cut-off Voltage | VGS(off) | -1.1 | -- | -0.5 | V | VDS = 3V, ID = 8A |
| Input Capacitance | Ciss | -- | 34.5 | -- | pF | VGS = -5V, VDS = 25V, f = 1.0MHz |
| Output Capacitance | Coss | -- | 9.2 | -- | pF | VGS = -5V, VDS = 25V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | -- | 2.6 | -- | pF | VGS = -5V, VDS = 25V, f = 1.0MHz |
| Total Gate Charge | Qg | -- | 0.97 | -- | nC | VGS = -5V to 5V, VDD = 300V, ID = 1mA |
| Gate-to-Source Charge | Qgs | -- | 0.37 | -- | nC | VGS = -5V to 5V, VDD = 300V, ID = 1mA |
| Gate-to-Drain (Miller) Charge | Qgd | -- | 0.23 | -- | nC | VGS = -5V to 5V, VDD = 300V, ID = 1mA |
| Turn-on Delay Time | td(on) | -- | 0.89 | -- | ns | VGS = -5V to 5V, VDD = 10V, ID = 1mA, RG = 6 |
| Rise Time | tr | -- | 8.7 | -- | ns | VGS = -5V to 5V, VDD = 10V, ID = 1mA, RG = 6 |
| Turn-off Delay Time | td(off) | -- | 2.3 | -- | ns | VGS = -5V to 5V, VDD = 10V, ID = 1mA, RG = 6 |
| Fall Time | tf | -- | 57.7 | -- | ns | VGS = -5V to 5V, VDD = 10V, ID = 1mA, RG = 6 |
| Diode Forward Voltage | VSD | -- | -- | 1.2 | V | ISD = 2mA, VGS = -5V |
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