Power Efficiency Silicon Carbide Diode Bestirpower BCH65S30D3 650V 30A for Free Wheeling Applications
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Product Description
Product Overview
The BCH65S30D3 is a 650V, 30A Silicon Carbide Schottky Diode from Bestirpower, leveraging advanced SiC diode technology for excellent low forward voltage and robustness. This diode is designed for applications demanding high power efficiency, offering benefits such as high surge current capability, no reverse recovery, and benchmark switching behavior. It is suitable for use as free-wheeling diodes in inverter stages, power factor correction, data centers, and switch-mode power supplies, contributing to system efficiency improvement, reduced size, and lower cost.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide (SiC)
- Technology: Schottky Diode
- Certifications: RoHS compliant / Halogen-free
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VRRM | Repetitive Peak Reverse Voltage | 650 | V | |||
| IF | Forward Current | TC = 25 | 72 | A | ||
| IF | Forward Current | TC = 135 | 34 | A | ||
| IF,SM | Non-Repetitive Forward Surge Current | TC = 25, tp = 10 ms | 216 | A | ||
| IF,SM | Non-Repetitive Forward Surge Current | TC = 110, tp = 10 ms | 187 | A | ||
| IF,RM | Repetitive Peak Forward Surge Current | TC = 25, tp = 10 ms | 186 | A | ||
| I2dt value | I2t | TC = 25, tp = 10 ms | 233 | As | ||
| I2dt value | I2t | TC = 110, tp = 10 ms | 174 | As | ||
| Ptot | Power Dissipation | TC = 25 | 254 | W | ||
| Ptot | Power Dissipation | TC = 110 | 110 | W | ||
| Ptot | Power Dissipation | TC = 150 | 42 | W | ||
| TJ,TSTG | Operating Junction and Storage Temperature | -55 | +175 | |||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | Typ. | 0.59 | /W | ||
| Electrical Characteristics | ||||||
| VDC | DC blocking voltage | 650 | - | - | V | |
| VF | Forward Voltage | IF=30ATJ=25 | 1.45 | 1.8 | V | |
| VF | Forward Voltage | IF=30ATJ=175 | 1.95 | - | V | |
| IR | Reverse Current | VR = 650 V, TJ = 25 | 2 | 20 | A | |
| IR | Reverse Current | VR = 650 V, TJ= 175 | 40 | 200 | A | |
| QC | Total Capacitive Charge | VR = 400 V, TJ = 25 | 85 | - | nC | |
| C | Total Capacitance | VR = 0Vf=1MHz | 2050 | - | pF | |
| EC | Capacitance Stored Energy | VR = 400Vf=1MHz | 162 | - | J | |
| Capacitance Stored Energy | VR = 200Vf=1MHz | 21 | - | J | ||
| Part Number and Ordering Information | ||||||
| Part Number | Top Marking | Package | Packing Method | Quantity | ||
| BCH65S30D3 | BCH65S30D3 | TO220-2 | Tube | 50 units | ||
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