Silicon Carbide Schottky Diode 650V 10A Bestirpower BCH65S10D4 for Operation in Switch Mode Power Supplies
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Product Description
Product Overview
The BCH65S10D4 is a 650V, 10A Silicon Carbide Schottky Diode from Bestirpower, utilizing advanced SiC diode technology. This diode offers excellent low forward voltage and robustness, making it suitable for applications requiring high power efficiency. Key benefits include negligible reverse recovery, high-speed switching, and a positive temperature coefficient, leading to temperature-independent switching. Its design helps reduce system size and cost while ensuring high reliability. Ideal for switch mode power supplies, solar inverters, data centers, and uninterruptible power supplies.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide (SiC)
- Technology: Schottky Diode
- Compliance: RoHS compliant
Technical Specifications
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| Model | BCH65S10D4 | 650V, 10A | |
| VRRM | Repetitive Peak Reverse Voltage | 650 | V |
| IF (TC=154) | Forward Current | 10 | A |
| TC | Case Temperature for IF | 154 | |
| QC | Total Capacitive Charge | 31 | nC |
| IF,SM | Non-Repetitive Forward Surge Current (TC = 25, tp = 10 ms) | 75 | A |
| I2dt | I2t value (TC = 25, tp = 10 ms) | 28 | As |
| Ptot (TC = 25) | Power Dissipation | 129 | W |
| TJ,TSTG | Operating Junction and Storage Temperature | -55 to +175 | |
| RJC | Thermal Resistance, Junction to Case, Typ. | 1.16 | /W |
| VF (IF=10A, TJ=25) | Forward Voltage | 1.4 - 1.6 | V |
| IR (VR = 650 V, TJ= 25) | Reverse Current | - 0.05 - 5 | A |
| C (VR = 0 V, f = 1MHz) | Total Capacitance | - 472 - | pF |
| EC (VR = 400 V, TC = 25) | Capacitance Stored Energy | - 7.5 - | J |
| Package | TO220-2 | ||
| Packing Method | Tube | ||
| Quantity | 50 units |
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