NPN Silicon transistor BLUE ROCKET MMBT3904 in compact SOT-23 package for switching and amplification

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Product Description

Product Overview

The MMBT3904 is a Silicon NPN transistor housed in a SOT-23 plastic package. Designed for general-purpose amplification and switching applications, it operates at low voltages and low currents. This transistor is suitable for a wide range of electronic circuits requiring reliable amplification and switching functionalities.

Product Attributes

Brand: Fsb (implied by URL http://www.fsbrec.com)
Package Type: SOT-23 Plastic Package
Transistor Type: NPN Silicon Transistor
Marking Code: H1A

Technical Specifications

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	60	V
Collector to Emitter Voltage	VCEO	40	V
Emitter to Base Voltage	VEBO	6.0	V
Collector Current	IC	200	mA
Collector Power Dissipation	PC	200	mW
Collector Power Dissipation (on ceramic board)	*PC	350	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Breakdown Voltage	VCBO	IC=10A, IE=0			60	V
Collector to Emitter Breakdown Voltage	VCEO	IC=1.0mA, IB=0			40	V
Emitter to Base Breakdown Voltage	VEBO	IE=10A, IC=0			6.0	V
Collector Cut-Off Current	ICBO	VCB=30V, IE=0			0.05	A
Emitter Cut-Off Current	IEBO	VEB=3.0V, IC=0			0.05	A
DC Current Gain (hFE)	hFE(1)	VCE=1.0V, IC=10mA	100		300
DC Current Gain (hFE)	hFE(2)	VCE=1.0V, IC=100mA		30
DC Current Gain (hFE)	hFE(3)	VCE=1.0V, IC=50mA		60
DC Current Gain (hFE)	hFE(4)	VCE=1.0V, IC=1.0mA		70
DC Current Gain (hFE)	hFE(5)	VCE=1.0V, IC=0.1mA		40
Collector-Emitter Saturation Voltage	VCE(sat)(1)	IC=10mA, IB=1.0mA		0.2		V
Collector-Emitter Saturation Voltage	VCE(sat)(2)	IC=50mA, IB=5.0mA		0.3		V
Base-Emitter Saturation Voltage	VBE(sat)(1)	IC=10mA, IB=1.0mA		0.65	0.85	V
Base-Emitter Saturation Voltage	VBE(sat)(2)	IC=50mA, IB=5.0mA			0.95	V
Transition Frequency	fT	VCE=20V, IC=10mA, f=100MHz		300		MHz
Output Capacitance	Cob	VCB=5.0V, f=1.0MHz			4.0	pF
Storage Time	tstg	VCC=3.0V, IC=10mA, IB1=-IB2=1.0mA			200	ns
Fall Time	tf	VCC=3.0V, IC=10mA, IB1=-IB2=1.0mA			50	ns
Delay Time	td	VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA		35		ns
Rise Time	tr	VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA		35		ns
Input Capacitance	Cib	VEB=0.5V, f=1.0MHz			8.0	pF