Silicon PNP Transistor BLUE ROCKET S8550M SOT23 Package Power Amplifier Application

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Product Description

Product Overview

The S8550M is a Silicon PNP transistor housed in a SOT-23 plastic package. It serves as a complementary pair to the S8050M and is a halogen-free product. This transistor is designed for power amplifier applications.

Product Attributes

Brand: FSB
Complementary Pair: S8050M
Material: Silicon PNP transistor
Package Type: SOT-23 Plastic Package
Halogen-Free: Yes

Technical Specifications

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	-40	V
Collector to Emitter Voltage	VCEO	-25	V
Emitter to Base Voltage	VEBO	-6.0	V
Collector Current	IC	-800	mA
Base Current	IB	-200	mA
Collector Power Dissipation	PC	200	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-65150

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Breakdown Voltage	VCBO	IC=-0.1mA, IE=0			-40	V
Collector to Emitter Breakdown Voltage	VCEO	IC=-2.0mA, IB=0			-25	V
Emitter to Base Breakdown Voltage	VEBO	IE=-0.1mA, IC=0			-6.0	V
Collector Cut-Off Current	ICBO	VCB=-35V, IE=0			-0.1	A
Emitter Cut-Off Current	IEBO	VEB=-6.0V, IC=0			-0.1	A
DC Current Gain	hFE(1)	VCE=-1.0V, IC=-100mA	85		300
DC Current Gain	hFE(2)	VCE=-1.0V, IC=-500mA		40
DC Current Gain	hFE(3)	VCE=-1.0V, IC=-5.0mA		45
Collector-emitter Saturation Voltage	VCE(sat)	IC=-500mA, IB=-50mA		-0.28	-0.6	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=-500mA, IB=-50mA		-0.98	-1.2	V
Base-Emitter Voltage	VBE	VCE=-1.0V, IC=-10mA		-0.66	-1.0	V
Transition Frequency	fT	VCE=-10V, IC=-50mA		100	200	MHz
Collector Output Capacitance	Cob	VCB=-10V, IE=0, f=1.0MHz			15	pF