Half Bridge IGBT Module Bestirpower BS600HF120B2SDX 1200V 600A Excellent Short Circuit Ruggedness for UPS

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Product Description

Bestirpower BS600HF120B2SDX IGBT Module

Product Overview

The Bestirpower BS600HF120B2SDX is a 1200V, 600A half-bridge IGBT module designed for high-frequency applications. Featuring ultrafast switching speeds, it is ideal for demanding industrial uses such as welding, inductive heating, and Uninterruptible Power Supplies (UPS). Key advantages include a positive temperature coefficient for VCE(sat), low switching losses, high current capability, and excellent short-circuit ruggedness.

Product Attributes

Brand: Bestirpower
Model: BS600HF120B2SDX
Type: IGBT Module (Half Bridge)

Technical Specifications

Parameter	Value	Unit	Notes
Absolute Maximum Ratings
Collector-Emitter Voltage (VCES)	1200	V
Gate-Emitter Voltage (VGES)	±20	V	Continuous
Continuous Collector Current (IC)	800	A	(TC=25°C)
Continuous Collector Current (IC)	600	A	(TC=90°C)
Maximum Power Dissipation (PD)	2142	W	(TC=25°C)
Maximum Power Dissipation (PD)			(TJ=175°C)
Short Circuit Withstand Time (tsc)	10	μs
Maximum IGBT Junction Temperature (TJ)	175	°C
Maximum Operating Junction Temperature Range (TJOP)	-40 to +150	°C
Storage Temperature Range (Tstg)	-40 to +125	°C
Diode Repetitive Peak Reverse Voltage (VRRM)	1200	V	Preliminary Data
Diode Continuous Forward Current (IF)	600	A	(TC=25°C)
Diode Maximum Forward Current (IFM)	1200	A
IGBT Electrical Characteristics (TC=25°C unless otherwise noted)
Collector-Emitter Breakdown Voltage (BVCES)	1200	V	VGE=0V, IC=1mA
Collector-Emitter Leakage Current (ICES)	1	mA	VCE=1200V, VGE=0V
Gate-Emitter Leakage Current (IGES)	±400	nA	VGE=20V, VCE=0V
Gate Threshold Voltage (VGE(th))	4.8 - 6.6	V	VGE=VCE, IC=8mA (Typ. 5.7V)
Collector-Emitter Saturation Voltage (VCE(sat))	1.65 - 2.00	V	VGE=15V, IC=600A (Typ. 1.65V at TJ=25°C, Typ. 2.00V at TJ=150°C)
Turn-on Delay Time (td(on))	0.12 - 0.13	μs	(Typ. at TJ=25°C and 150°C)
Turn-on Rise Time (tr)	0.06 - 0.07	μs	(Typ. at TJ=25°C and 150°C)
Turn-off Delay Time (td(off))	0.41 - 0.46	μs	(Typ. at TJ=25°C and 150°C)
Turn-off Fall Time (tf)	0.24 - 0.39	μs	(Typ. at TJ=25°C and 150°C)
Turn-on Switching Loss (Eon)	17.0 - 31.5	mJ	(Typ. at TJ=25°C and 150°C)
Turn-off Switching Loss (Eoff)	58.5 - 74.0	mJ	(Typ. at TJ=25°C and 125°C)
Total Gate Charge (Qg)	3750	nC	(Typ. at TJ=25°C)
Input Capacitance (Cies)	62.5	nF	(Typ. at TJ=25°C)
Reverse Transfer Capacitance (Cres)	0.45		(Typ.)
Integrated Gate Resistor (RGint)	1.0	Ω	(Typ.)
Thermal Resistance, Junction-to-Case (IGBT) (RthJC)	0.07	°C/W	Per IGBT
Thermal resistance, case to heatsink (RthCH)	0.05	°C/W	Per IGBT, λgrease = 1 W/(m·K)
Short circuit data (Isc)	2000	A	VGE=15V, VCC=800V, tp≤10μs
Diode Electrical Characteristics (TC=25°C unless otherwise noted)
Diode Forward Voltage (VF)	1.60 - 1.95	V	IF=600A (Typ. 1.60V at TJ=25°C, Typ. 1.55V at TJ=150°C)
Diode peak Reverse Recovery Current (Irr)	711 - 785	A	(Typ. at TJ=25°C and 150°C)
Diode Reverse Recovery Charge (Qrr)	95.0 - 150	μC	(Typ. at TJ=25°C and 150°C)
Diode Reverse Recovery Energy (Err)	56.0 - 80.0	mJ	(Typ. at TJ=25°C and 150°C)
Thermal Resistance, Junction-to-Case (Diode) (RthJC)	0.087	°C/W	Per Diode
Thermal resistance, case to heatsink (RthCH)	0.06	°C/W	Per Diode, λgrease = 1 W/(m·K)
Module Characteristics
Isolation Voltage (VISO)	4000	V	(All Terminals Shorted), f=50Hz, 1minute
Case-To-Sink Thermal Resistance (RθCS)	0.1	°C/W	(Conductive Grease Applied)
Power Terminals Screw Torque	2.5 - 5.0	N·m	M6
Mounting Screw Torque	3.0 - 6.0	N·m	M6
Weight	310	g