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Trench FS IGBT Bestirpower BGH65N50L1 650V 50A for Power Conversion and Industrial Applications

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Product Description

Bestirpower BGH65N50L1: 650V 50A Trench FS IGBT for High-Efficiency Power Conversion

The Bestirpower BGH65N50L1 is a high-performance Trench FS IGBT designed for demanding power electronics applications. Leveraging Bestirpower's advanced technology, this IGBT achieves exceptionally low gate charge, leading to significantly higher efficiency through optimized gate charge management. Its user-friendly design contributes to low EMI and reduced switching losses, making it an ideal choice for designers seeking robust and efficient solutions. Key applications include resonant converters, uninterruptible power supplies (UPS), and welding converters.

Product Attributes

  • Brand: Bestirpower
  • Technology: Trench FS IGBT

Technical Specifications

Symbol Parameter Test Conditions Min Typ Max Unit Note
Absolute Maximum Ratings
VCE Collector-emitter voltage (Tvj 25 C) 650 V
VGE Gate-emitter voltage 20 V
IC DC collector current, limited by Tvjmax TC = 25 80 A
IC DC collector current, limited by Tvjmax TC = 100 50 A
ICpulse Pulsed collector current, tp limited by Tvjmax 200 A
Ptot Power Dissipation TC = 25 484 W Fig.8
Ptot Power Dissipation TC = 100 242 W
TJ Junction temperature range -40 ~ 175
TSTG Storage temperature range -40 ~ 175
Thermal Resistance
RthJC IGBT thermal resistance, junction-case 0.31 /W
RthJA Thermal resistance, junction-to-ambient 41.43 /W
Tsold Soldering temperature, wave soldering only allowed at leads 260
Electrical Characteristics (TJ= 25 unless otherwise noted)
V(BR)CES Collector-emitter Breakdown Voltage VGE=0V, IC=200A 650 - - V
ICES Collector Cut-off Current VCE=650V, VGS=0V - - 50 A
IGES Gate-emitter Leakage Current VGE=20V, VGE=0V - - 100 nA
VGE(TH) Gate Threshold Voltage VCE=VGE, IC=500A 3.2 4.0 4.8 V Fig.5
VCE(sat) Collector-Emitter Saturation Voltage VGE=15V, IC=50A, TJ=25 - 1.4 1.75 V Fig.4
VCE(sat) Collector-Emitter Saturation Voltage VGE=15V, IC=50A, TJ=175 - 1.58 - V
Dynamic Characteristics
Cies Input Capacitance VCE=25V, VGE=0V, f=1MHz - 4093 - pF Fig.6
Coes Output Capacitance - 73 - pF
Cres Reverse Transfer Capacitance - 19 - pF
Switching Parameters
td(on) Turn-on Delay Time VCE=400V, IDC=50A, RG=8, VGE=0/+15V, TJ=25 - 22.2 - ns
td(on) Turn-on Delay Time VCE=400V, IDC=50A, RG=8, VGE=0/+15V, TJ=150 - 21.8 - ns
tr Rise Time TJ=25 - 30.2 - ns
tr Rise Time TJ=150 - 32.1 - ns
td(off) Turn-off Delay Time TJ=25 - 139.7 - ns
td(off) Turn-off Delay Time TJ=150 - 164.7 - ns
tf Fall Time TJ=25 - 63.5 - ns
tf Fall Time TJ=150 - 97.3 - ns
Eon Turn-on Switching Energy TJ=25 - 0.74 - mJ
Eon Turn-on Switching Energy TJ=150 - 0.84 - mJ
Eoff Turn-off Switching Energy TJ=25 - 0.77 - mJ
Eoff Turn-off Switching Energy TJ=150 - 1.17 - mJ
Gate Charge Characteristics
Qg Gate Charge Total VCC=520V, IC=50A, VGE=0 to 15V - 135 - nC Fig.7
Qgc Gate-emitter charge - 35 - nC
Qge Gate-collector charge - 22 - nC

Key Features

  • Maximum junction temperature TJmax = 175C
  • Low saturation voltage VCEsat = 1.4 V at TJ = 25C
  • VCEsat has a positive temperature coefficient, suitable for parallel applications
  • Low gate charge for improved efficiency
  • Reduced switching losses and low EMI

Applications

  • Resonant converters
  • Uninterruptible power supplies
  • Welding converters

Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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