Silicon Carbide Schottky Diode for Power Supplies and Solar Inverters Bestirpower BCA65S30D4 650V 30A
Price:
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The BCA65S30D4 is a 650V, 30A Silicon Carbide Schottky Diode from Bestirpower, leveraging advanced SiC technology for excellent low forward voltage and robustness. This diode is designed for high power efficiency applications, offering negligible reverse recovery, high-speed switching, and temperature-independent switching. It is ideal for use in switch-mode power supplies, solar inverters, data centers, and uninterruptible power supplies, contributing to reduced system size and cost.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide (SiC)
- Technology: Schottky Diode
- Certifications: RoHS compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Value | Unit |
|---|---|---|---|---|
| VRRM | Repetitive Peak Reverse Voltage | 650 | V | |
| IF | Forward Current | TC = 25 | 63 | A |
| IF | Forward Current | TC = 135 | 33 | A |
| IF | Forward Current | TC = 141 | 30 | A |
| IF,SM | Non-Repetitive Forward Surge Current | TC = 25, tp = 10 ms | 189 | A |
| IF,SM | Non-Repetitive Forward Surge Current | TC = 110, tp = 10 ms | 126 | A |
| IF,RM | Repetitive Peak Forward Surge Current | TC = 25, tp = 10 ms | 170 | A |
| I2t | I2t value | TC = 25, tp = 10 ms | 179 | As |
| I2t | I2t value | TC = 110, tp = 10 ms | 79 | As |
| Ptot | Power Dissipation | TC = 25 | 292 | W |
| Ptot | Power Dissipation | TC = 110 | 126 | W |
| Ptot | Power Dissipation | TC = 150 | 49 | W |
| TJ,TSTG | Operating Junction and Storage Temperature | -55 to +175 | ||
| RJC | Thermal Resistance, Junction to Case, Typ. | 0.51 | /W | |
| VF | Forward Voltage | IF=20A, TJ=25 | - 1.56 1.7 | V |
| VF | Forward Voltage | IF=20A, TJ=175 | - 2.2 - | V |
| IR | Reverse Current | VR = 650 V, TJ= 25 | - 0.01 5 | A |
| IR | Reverse Current | VR = 650 V, TJ= 175 | - 1 - | A |
| QC | Total Capacitive Charge | VR = 400 V, TJ = 25 | - 17.5 72 | nC |
| C | Total Capacitance | VR = 0 V, f = 1MHz | - 1303 - | pF |
| C | Total Capacitance | VR = 200 V, f = 1MHz | - 136 - | pF |
| C | Total Capacitance | VR = 400 V, f = 1MHz | - 128 - | pF |
| EC | Capacitance Stored Energy | VR = 400 V, TC = 25 | - - | J |
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