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Super junction mosfet Bestirpower BMW65N040UC1 engineered for switching and low EMI in power supply systems

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Delivery Time: Negotiable
Product Description

Product Overview

The BMW65N040UC1 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced super junction technology to achieve exceptionally low on-resistance and gate charge. This design facilitates significantly higher efficiency through optimized charge coupling technology, offering users advantages such as low EMI and reduced switching losses. Its robust construction ensures very high commutation ruggedness and is 100% UIS Tested. Ideal for demanding applications including PC power supplies, server power supplies, telecommunications, solar inverters, and automotive superchargers.

Product Attributes

  • Brand: Bestirpower
  • Technology: Super Junction Power MOSFET

Technical Specifications

Model Description Key Features Applications
BMW65N040UC1 650 V, 80 A, 40 m Super Junction Power MOSFET Extremely low losses (low FOM Rdson*Qg and Eoss), Low EMI, Low switching loss, Very high commutation ruggedness, 100% UIS Tested PC power, Server power supply, Telecom, Solar inverter, Super charger for automobiles
Symbol Parameter Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (TJ = 25 unless otherwise noted)
VDSS Drain to Source Voltage(1) 650 V
VGSS Gate to Source Voltage 30 V
ID Drain Current(2) VGS = 10 V, (TC = 25) 80 A
ID Drain Current(2) VGS = 10 V, (TC = 100) 51 A
IDM Drain Current Pulsed 240 A
EAS Single Pulsed Avalanche Energy(3) 2025 mJ
dv/dt MOSFET dv/dt 50 V/ns
Peak Diode Recovery dv/dt 50
PD Power Dissipation (TC = 25) 500 W
TJ, TSTG Operating and Storage Temperature Range -55 150
Is Continuous diode forward current 80 A
Is Pulse Diode pulse current(2) 240 A
Thermal Characteristics
RJC Thermal Resistance, Junction to Case, Max. 0.25 /W
RJA Thermal Resistance, Junction to Ambient, Max. 62
Tsold Soldering temperature, wavesoldering only allowed at leads 260
Electrical Characteristics (TJ = 25 unless otherwise noted)
Off Characteristics
BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 1 mA 650 V
IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V, TJ=25C 10 A
IGSS Gate-Source Leakage Current VGS = 30 V, VDS = 0 V 100 nA
On Characteristics
V(GS)th Gate Threshold Voltage VGS = VDS , ID = 2 mA 3.0 4.5 V
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID =40 A 33 40 m
Dynamic Characteristics
Ciss Input Capacitance VGS = 0 V,VDS = 50 V, f = 100 KHz 8100 pF
Coss Output Capacitance 352 pF
Co(tr) Time Related Output Capacitance(2) VDS = 0 V to 480 V, VGS = 0 V 934 pF
Co(er) Energy Related Output Capacitance(1) 200 pF
Qg(tot) Total Gate Charge at 10 V VDD = 400 V, ID = 40 A, VGS =0 to 10 V 133 nC
Qgs Gate to Source Charge 33 nC
Qgd Gate to Drain Miller Charge 39 nC
RG Gate Resistance VDD= 0 V, VGS = 0 V, F = 1 MHz 2.5
td(on) Turn-On Delay Time VDD = 400 V, ID = 40A, VGS = 10 V 27 ns
tr Turn-On Rise Time 8 ns
td(off) Turn-Off Delay Time 151 ns
tf Turn-Off Fall Time 5 ns
Source-Drain Diode Characteristics
VSD Diode Forward Voltage VGS = 0 V,IF=40A TJ=25 0.9 V
trr Reverse Recovery Time VR = 400 V, IF= 40 A, diF/dt = 150 A / s 155 ns
Qrr Reverse Recovery Charge 1.9 C
Imm Peak reverse recovery current 22 A
Crss Reverse transfer capacitance 10 pF
Part Number Top Marking Package Packing Method Quantity
BMW65N040UC1 BMW65N040UC1 TO247-3 Tube 30 units

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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