N Channel Silicon Carbide Power MOSFET Bestirpower BCBF120N40M1 ideal for solar inverters EV charging stations
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Product Description
Product Overview
The BCBF120N40M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding applications. It offers superior system efficiency, higher frequency applicability, and increased power density due to its high switching speed, low gate charge, and fast intrinsic diode with low reverse recovery. This MOSFET is ideal for solar inverters, EV charging stations, UPS systems, and industrial power supplies, reducing cooling requirements and enabling more compact designs. It boasts robust avalanche capability and is 100% avalanche tested. The device is Pb-free, Halogen Free, and RoHS Compliant.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide (SiC)
- Channel Type: N-Channel
- Certifications: Pb-free, Halogen Free, RoHS Compliant
- Testing: 100% Avalanche Tested
Technical Specifications
| Model | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| BCBF120N40M1 | Drain to Source Voltage (VDSS) | 1200 | V | |||
| Gate to Source Voltage (VGS) (DC) | -10 | +22 | V | |||
| Recommended Operation Gate to Source Voltage (VGSop) | -5 | +18 | V | |||
| Drain Current Continuous (ID) | VGS=18V, TC = 25 | 60 | A | |||
| Drain Current Continuous (ID) | VGS=18V, TC = 100 | 42 | A | |||
| Drain Current Pulsed (IDM) (Note1) | 160 | A | ||||
| Avalanche Capability (EAS) | VDD=100V, VGS=20V, L=2mH | 1000 | mJ | |||
| Avalanche Capability (IAV) | VDD=100V, VGS=20V, L=2mH | 30 | A | |||
| Power Dissipation (PD) | TC = 25 | 375 | W | |||
| Derate Above 25 | 2.5 | W/ | ||||
| Operating and Storage Temperature Range (TJ, TSTG) | -55 | 175 | ||||
| Drain to Source Breakdown Voltage (BVDSS) | TJ=25, ID = 1 mA | 1200 | V | |||
| Zero Gate Voltage Drain Current (IDSS) | VDS = 1200 V, VGS = 0 V | 1 | 100 | A | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS = 1200 V, VGS = 0 V, TJ = 175 | 100 | A | |||
| Gate-Source Leakage Current (IGSS) | VGS = +22 V, VDS = 0 V | +100 | nA | |||
| Gate-Source Leakage Current (IGSS) | VGS = -10 V, VDS = 0 V | -100 | nA | |||
| Gate Threshold Voltage (VGS(th)) | VGS = VDS, ID = 10 mA | 2.0 | 3.0 | 4.5 | V | |
| Static Drain to Source On Resistance (RDS(on)) | VGS = 18 V, ID = 30 A | 40 | 56 | m | ||
| Static Drain to Source On Resistance (RDS(on)) | VGS = 18 V, ID = 30 A, TJ = 175 | 51 | m | |||
| Static Drain to Source On Resistance (RDS(on)) | VGS = 15 V, ID = 30 A | 50 | m | |||
| Static Drain to Source On Resistance (RDS(on)) | VGS = 15 V, ID = 30 A, TJ = 175 | 59 | m | |||
| Static Drain to Source On Resistance (RDS(on)) | VGS = 18 V, ID = 40 A | 40 | m | |||
| Static Drain to Source On Resistance (RDS(on)) | VGS = 18 V, ID = 40 A, TJ = 175 | 58 | m | |||
| Transconductance (gfs) | VDS = 20 V, ID = 30 A | 15 | S | |||
| Input Capacitance (Ciss) | VDS = 800 V, VGS = 0V, f = 250 kHz | 1960 | pF | |||
| Output Capacitance (Coss) | 125 | pF | ||||
| Reverse Capacitance (Crss) | 5 | pF | ||||
| Stored Energy in Output Capacitance (Eoss) | VDS = 0 V to 800 V, VGS = 0 V | 50 | J | |||
| Energy Related Output Capacitance (Co(er)) | 146 | pF | ||||
| Time Related Output Capacitance (Co(tr)) | 258 | pF | ||||
| Total Gate Charge (Qg(tot)) | VDS = 800 V, ID = 30 A, VGS = -5 V / 18 V | 109 | nC | |||
| Gate to Source Charge (Qgs) | 28 | nC | ||||
| Gate to Drain Miller Charge (Qgd) | 35 | nC | ||||
| Internal Gate Resistance (RG) | f = 1MHz, VAC=30mV, open drain | 3.5 | ||||
| Turn-On Delay Time (td(on)) | VDS = 800 V, ID = 30 A, VGS = -5 V / 18 V, RG = 2.5 , FWD : BCH120S020D1, Inductive load | 18 | ns | |||
| Turn-On Rise Time (tr) | 13 | ns | ||||
| Turn-Off Delay Time (td(off)) | 35 | ns | ||||
| Turn-Off Fall Time (tf) | 8 | ns | ||||
| Turn-on Switching Energy (Eon) | 232 | J | ||||
| Turn-off Switching Energy (Eoff) | 73 | J | ||||
| Total Switching Energy (Etot) | 305 | J | ||||
| Maximum Continuous Diode Forward Current (IS) | 60 | A | ||||
| Maximum Pulsed Diode Forward Current (ISM) | 160 | A | ||||
| Diode Forward Voltage (VSD) | VGS = -5 V, ISD = 30 A | 4.2 | V | |||
| Reverse Recovery Time (trr) | VDD = 800 V, ISD = 30 A, dIF/dt = 3000 A / s | 22 | ns | |||
| Reverse Recovery Charge (Qrr) | VDD = 800 V, ISD = 30 A, dIF/dt = 3000 A / s | 348 | nC | |||
| Reverse Recovery Time (trr) | VGS=-5V, VDD = 800 V, ISD = 40 A, dIF/dt = 4200 A / s | 13 | ns | |||
| Reverse Recovery Charge (Qrr) | VGS=-5V, VDD = 800 V, ISD = 40 A, dIF/dt = 4200 A / s | 182 | nC | |||
| Peak Reverse Recovery Current (Irrm) | 23 | A | ||||
| Thermal Resistance, Junction to Case (RJC) | Max. | 0.4 | /W | |||
| Thermal Resistance, Junction to Ambient (RJA) | Max. | 34 | /W | |||
| Soldering temperature (Tsold) | wave soldering only allowed at leads | 260 |
Applications
- Solar inverter
- EV charging station
- UPS
- Industrial power supply
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina