Collector Current 600mA General Purpose Transistor BLUE ROCKET MMBT2907A Silicon PNP SOT23 Package

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Product Description

Product Overview

The MMBT2907A is a Silicon PNP transistor designed for general-purpose amplification. It is housed in a SOT-23 plastic package and can handle collector currents up to 600mA. This transistor is suitable for various amplification tasks.

Product Attributes

Package Type: SOT-23
Transistor Type: PNP Silicon
Marking Code: H2F
hFE Classifications: H2F (100-300)

Technical Specifications

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	-60	V
Collector to Emitter Voltage	VCEO	-60	V
Emitter to Base Voltage	VEBO	-5.0	V
Collector Current	IC	-600	mA
Collector Power Dissipation	PC	350	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Breakdown Voltage	VCBO	IC=-10A, IE=0	-60			V
Collector to Emitter Breakdown Voltage	VCEO	IC=-10mA, IB=0	-60			V
Emitter to Base Breakdown Voltage	VEBO	IE=-10A, IC=0	-5.0			V
Collector Cut-Off Current	ICBO	VCB=-50V, IE=0			-0.01	A
DC Current Gain	hFE(1)	VCE=-10V, IC=-150mA*	100		300
DC Current Gain	hFE(2)	VCE=-10V, IC=-500mA*	50
DC Current Gain	hFE(3)	VCE=-10V, IC=-10mA	100
DC Current Gain	hFE(4)	VCE=-10V, IC=-1.0mA	100
DC Current Gain	hFE(5)	VCE=-10V, IC=-0.1mA	75
Collector-Emitter Saturation Voltage	VCE(sat) (1)	IC=-150mA, IB=-15 mA		-0.4		V
Collector-Emitter Saturation Voltage	VCE(sat) (2)	IC=-500mA, IB=-50mA		-1.6		V
Base-Emitter Saturation Voltage	VBE(sat) (1)	IC=-150mA, IB=-15 mA		-1.3		V
Base-Emitter Saturation Voltage	VBE(sat) (2)	IC=-500mA, IB=-50mA		-2.6		V
Transition Frequency	fT	VCE=-20V, IC=-50mA, f=100MHz		200		MHz
Output Capacitance	Cob	VCB=-10V, IE=0, f=1.0MHz			8.0	pF
TurnOn Time	ton	VCC=-30V, IC=-150mA, IB1=-15mA			50	ns
TurnOff Time	toff	VCC=-30V, IC=-150mA, IB1=IB2=-15mA			100	ns