NPN Silicon Transistor BLUE ROCKET S8050M-D HY3D SOT-23 Package Suitable for Amplifier Applications

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Product Description

Product Overview

The S8050M is a Silicon NPN transistor designed for power amplifier applications. It is packaged in a SOT-23 plastic package and is complementary to the S8550M transistor. This device is suitable for various power amplification circuits.

Product Attributes

Package Type: SOT-23
Semiconductor Type: NPN Silicon Transistor
Complementary Pair: S8550M
Marking Codes: HY3B, HY3C, HY3D

Technical Specifications

Absolute Maximum Ratings (Ta=25)

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	40	V
Collector to Emitter Voltage	VCEO	25	V
Emitter to Base Voltage	VEBO	6.0	V
Collector Current	IC	800	mA
Base Current	IB	200	mA
Collector Power Dissipation	PC	450	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Electrical Characteristics (Ta=25)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Breakdown Voltage	VCBO	IC=0.1mA, IE=0			40	V
Collector to Emitter Breakdown Voltage	VCEO	IC=2.0mA, IB=0			25	V
Emitter to Base Breakdown Voltage	VEBO	IE=0.1mA, IC=0			6.0	V
Collector Cut-Off Current	ICBO	VCB=35V, IE=0			0.1	A
Emitter Cut-Off Current	IEBO	VEB=6.0V, IC=0			0.1	A
DC Current Gain	hFE	VCE=1.0V, IC=100mA	85		300
		VCE=1.0V, IC=500mA	40
		VCE=1.0V, IC=5.0mA	45
Collector-Emitter Saturation voltage	VCE(sat)	IC=500mA, IB=50mA		0.28	0.5	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=500mA, IB=50mA		0.98	1.2	V
Base-Emitter Voltage	VBE	VCE=1.0V, IC=10mA		0.66	1.0	V
Transition Frequency	fT	VCE=10V, IC=50mA	100		190	MHz
Collector Output Capacitance	Cob	VCB=10V, IE=0, f=1.0MHz			9.0	pF