Silicon NPN Transistor BLUE ROCKET 2SD669A Low Frequency Power Amplification TO126F Plastic Package

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Product Description

Product Overview

The 2SD669(A) is a silicon NPN transistor designed for low-frequency power amplification. It comes in a TO-126F plastic package and serves as a complementary pair with the 2SB649(A). This transistor is suitable for various amplification applications.

Product Attributes

Brand: FSB (implied by datasheet URL http://www.fsbrec.com)
Package Type: TO-126F Plastic Package
Transistor Type: NPN Silicon
Complementary Pair: 2SB649(A)

Technical Specifications

Parameter	Symbol	Rating	Unit	Test Conditions	Min	Typ	Max
Absolute Maximum Ratings (Ta=25)
Collector to Base Voltage	VCBO	180	V
Collector to Emitter Voltage	VCEO		V
		2SD669: 120 2SD669A: 160	V
Emitter to Base Voltage	VEBO	5.0	V
Collector Current - Continuous	IC	1.5	A
Collector Current (Pulse)	ICP	3.0	A
Collector Power Dissipation	PC	1.0	W	(Ta=25)
Collector Power Dissipation	PC	20	W	(Tc=25)
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150
Electrical Characteristics (Ta=25)
Collector to Base Breakdown Voltage	VCBO	180	V	IC=1.0mA, IE=0
Collector to Emitter Breakdown Voltage	VCEO		V	IC=10mA, RBE=
		2SD669: 120 2SD669A: 160	V
Emitter to Base Breakdown Voltage	VEBO	5.0	V	IE=1.0mA, IC=0
Collector Cut-Off Current	ICBO	10	A	VCB=160V, IE=0
DC Current Gain	hFE(1)			VCE=5.0V, IC=150mA	60		320
	hFE(2)			VCE=5.0V, IC=500mA	30
Base to Emitter Voltage	VBE		V	VCE=5.0V, IC=150mA		1.5
Collector to Emitter Saturation Voltage	VCE(sat)		V	IC=500mA, IB=50mA		1.0
Transition Frequency	fT	140	MHz	VCE=5.0V, IC=150mA
Collector output capacitance	Cob	14	pF	VCB=10V, IE=0, f=1.0MHz