NPN Silicon Transistor BLUE ROCKET S8050M-D SOT-23 Package Suitable for Amplifier Circuits

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Product Description

Product Overview

The S8050M is a Silicon NPN transistor housed in a SOT-23 plastic package. It serves as a complementary pair to the S8550M and is designed for power amplifier applications. This transistor offers specific hFE classifications (B, C, D) with corresponding marking codes and ranges, indicating its suitability for various amplification needs.

Product Attributes

Package Type: SOT-23
Semiconductor Type: NPN Silicon Transistor
Complementary Pair: S8550M

Technical Specifications

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	40	V
Collector to Emitter Voltage	VCEO	25	V
Emitter to Base Voltage	VEBO	6.0	V
Collector Current	IC	800	mA
Base Current	IB	200	mA
Collector Power Dissipation	PC	450	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Breakdown Voltage	VCBO	IC=0.1mA, IE=0			40	V
Collector to Emitter Breakdown Voltage	VCEO	IC=2.0mA, IB=0			25	V
Emitter to Base Breakdown Voltage	VEBO	IE=0.1mA, IC=0			6.0	V
Collector Cut-Off Current	ICBO	VCB=35V, IE=0		0.1		A
Emitter Cut-Off Current	IEBO	VEB=6.0V, IC=0		0.1		A
DC Current Gain	hFE(1)	VCE=1.0V, IC=100mA	85		300
DC Current Gain	hFE(2)	VCE=1.0V, IC=500mA	40
DC Current Gain	hFE(3)	VCE=1.0V, IC=5.0mA	45
Collector-Emitter Saturation voltage	VCE(sat)	IC=500mA, IB=50mA		0.28	0.5	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=500mA, IB=50mA		0.98	1.2	V
Base-Emitter Voltage	VBE	VCE=1.0V, IC=10mA	0.66		1.0	V
Transition Frequency	fT	VCE=10V, IC=50mA	100		190	MHz
Collector Output Capacitance	Cob	VCB=10V, IE=0, f=1.0MHz			9.0	pF