Silicon NPN Transistor SOT23 Package Featuring BLUE ROCKET MMBTA42 Suitable for High Voltage Control Circuits

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Product Description

Product Overview

The MMBTA42 is a silicon NPN transistor housed in a SOT-23 plastic package. It offers high voltage capabilities, low saturation voltage, and low collector output capacitance. This transistor is designed as a complementary pair to the MMBTA92 and is suitable for high voltage control circuits.

Product Attributes

Package Type: SOT-23
Semiconductor Type: NPN Silicon Transistor
Marking Code: H1D
Complementary Pair: MMBTA92

Technical Specifications

Parameter	Symbol	Rating Unit	Value
Collector to Base Voltage	VCBO	V	300
Collector to Emitter Voltage	VCEO	V	300
Emitter to Base Voltage	VEBO	V	6.0
Collector Current	IC	mA	500
Collector Power Dissipation*	PC	mW	350
Junction Temperature	Tj		150
Storage Temperature Range	Tstg		-55150

Electrical Characteristics (Ta=25)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Breakdown Voltage	VCBO	IC=100A, IE=0			300	V
Collector to Emitter Breakdown Voltage	VCEO	IC=1.0mA, IB=0			300	V
Emitter to Base Breakdown Voltage	VEBO	IE=100A, IC=0			6.0	V
Collector Cut-Off Current	ICBO	VCB=200 V, IE=0			0.1	A
Emitter Base Cut-Off Current	IEBO	VBE=6.0V, IC=0			0.1	A
DC Current Gain *hFE(1)	hFE	VCE=10V, IC=10mA	40
DC Current Gain *hFE(2)	hFE	VCE=10V, IC=30mA	40
DC Current Gain *hFE(3)	hFE	VCE=10V, IC=1.0mA	25
Collector to Emitter Saturation Voltage *VCE(sat)	VCE(sat)	IC=20mA, IB=2.0mA			0.5	V
Base to Emitter Saturation Voltage *VBE(sat)	VBE(sat)	IC=20mA, IB=2.0mA			0.9	V
Transition Frequency	fT	IC=10mA, VCE=20V, f=100MHz		50		MHz
Collector output capacitance	Cob	VCB=20V, IE=0, f=1.0MHz			3.0	pF